Abstract:In this paper, we present a systematic investigation of metal–organic chemical vapor deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The dielectric constant and breakdown field of the in situ SiN were extracted from devices with varied gate dielectric thicknesses. Using frequency-dependent capacitance–voltage and parallel conductance methods, we obtained a low trap density of $\sim 3\times 10^{12}$ cm $^{-2}$ eV $^{-1}$ at the SiN/AlGaN interface. The MISHEMTs with a source–drain distance of $3~\mu \text{m}$ show a maximum drain current of 1560 mA/mm and a high on/off current ratio of $10^{9}$ . The device threshold voltage ( ${V}_\textsf {th}$ ) stability was assessed by means of both negative and positive gate stress measurements, as well as temperature-dependent $ {I}_\textsf {D}$ – ${V}_\textsf{G}$ measurements. We observed a minimal $ {V}_\textsf{th}$ shift of ~0.4 V under both 3000 s gate stress of ${V}_\textsf {GS}= 4$ V and up to 200 °C thermal stimulation. Furthermore, combining the in situ SiN with plasma-enhanced chemical vapor deposition SiN, we developed a bilayer passivation scheme for effective suppression of current collapse. Employing the high-quality in situ SiN, we have demonstrated large-area GaN MISHEMTs on Si with a gate width of 20 mm, showing a low off-state leakage of $2~\mu \text{A}$ /mm at 600 V and a low dynamic/static ON-resistance ratio. The device results show great advantages of employing in situ SiN in D-mode GaN MISHEMTs for high-efficiency power switching applications.

Compatibility of AlN/SiN<sub>x</sub>Passivation With LPCVD-SiN<sub>x</sub>Gate Dielectric in GaN-Based MIS-HEMT

Gate-first Process Compatible, High-Quality in Situ SiNx for Surface Passivation and Gate Dielectrics in AlGaN/GaN MISHEMTs

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

Improved LPCVD-SiNx/AlGaN/GaN MIS-HEMTs by Using In-Situ MOCVD-SiNx As an Interface Sacrificial Layer

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx As a Gate Dielectric

Characterization of Gate Leakage and Reliability of Normally-OFF GaN MOSFET with LPCVD-SiN<sub><i>x</i></sub>/PEALD-AlN Dual Gate Dielectric and <i>In-Situ</i> H<sub>2</sub>(15%)/N<sub>2</sub>(85%) Plasma Pretreatment

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Investigation of the Trap States and $v_{\text{th}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation

Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiN<sub>x</sub> GaN MISFET with In Situ H<sub>2</sub>/N<sub>2</sub> Plasma Pretreatment

In Situ Silane Surface Passivation for Gate-First Undoped AlGaN/GaN HEMTs with Minimum Current Collapse and High-Permittivity Dielectric

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

Integration of Lpcvd-Sinx Gate Dielectric with Recessed-Gate E-Mode Gan Mis-Fets: Toward High Performance, High Stability and Long Tddb Lifetime

Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiN x Passivation

Comprehensive Comparison of MOCVD- and LPCVD-SiNx Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications

Effective Suppression of Deep Interface States and Dielectric Trapping in SiNx/GaN Metal-Insulator-semiconductor Structures by a SiOxNy Interfacial Layer Grown by Plasma-Enhanced Atomic Layer Deposition

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation