Abstract:The combination of ultrathin-barrier (UTB) AlGaN (<; 6 nm)/GaN heterostructure and a charge-modulated SiNx grown by low-pressure chemical vapor deposition (LPCVD) is a promising technique for development of GaN-based millimeter-wave power amplifiers and recessfree enhancement-mode (E-mode) power switches. The LPCVD-SiN x passivation is capable of inducing high density of positive charges at the SiN x /(Al)GaN interface (~3.50 × 10 13 cm -2 ), ensuring efficient recovery of 2-D electron gas (2-DEG) density that is comparable with conventional AlGaN/GaN heterostructure. Temperature-dependent Hall measurements and scattering mechanism simulations confirm the positive interfacial charges as well as interface states with density below 10 13 cm -2 and exert weak remote coulombic scattering of 2-DEG in metal-insulator- semiconductor heterojunction field-effect transistors (MIS-HFETs), which warrants a low ON-resistance of UTBAlGaN/GaN-based devices. UTB-AlGaN (<; 6 nm)/GaN heterostructure with LPCVD-SiN x passivation is a compelling technology platform for fabrication of high-frequency power amplifiers and high-efficiency E-mode power switches.

Ultrathin Barrier AlGaN/GaN Hybrid‐anode‐diode with MOCVD In‐situ Si 3 N 4 ‐cap and LPCVD‐Si 3 N 4 Bilayer Passivation Stack for Dynamic Characteristic Improvement

High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al<sub>2</sub>O<sub>3</sub> Gate Dielectric and <i>In Situ</i> Si<sub>3</sub>N<sub>4</sub>-Cap Passivation

A Novel Ultra-thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-temperature Reverse Blocking Characteristic

Tri-Gated Hybrid Anode AlGaN/GaN Power Diode with Intrinsic Low Turn-on Voltage and Ultralow Reverse Leakage Current

0.3 V-T/1.1 Kv Algan/Gan Lateral Power Diode with Mis-Gated Hybrid Anode on Silicon Substrate

Lateral Algan/Gan Power Diode With Mis-Gated Hybrid Anode For Ultra-Low Turn-On Voltage And High Breakdown Voltage

Over 1.1 kV breakdown low turn-on voltage GaN-on-Si power diode with MIS-Gated hybrid anode

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

On the coupled effect of a MIS-based anode and AlGaN-polarized super-junction to reduce the local electric field for AlGaN/GaN Schottky barrier diodes

2.69 kV/2.11 m Omega center dot cm(2) and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

2.69 kV/2.11 mO.cm(2) and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

2.69 kV/2.11 m?cm<SUP>2</SUP> and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

Presence of High Density Positive Fixed Charges at ALD–Al2O3/GaN (cap) Interface for Efficient Recovery of 2‐DEG in Ultrathin‐Barrier AlGaN/GaN Heterostructure

Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure

0.2- AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer

Enhancing Key Performance of Vertical GaN Schottky Barrier Diodes Through AlOxInsertion and Dual Ion Co-Implantation

Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode.