Enhancing Key Performance of Vertical GaN Schottky Barrier Diodes Through AlOxInsertion and Dual Ion Co-Implantation

Bo Li,Zhengweng Ma,Linfei Gao,Junfa Mao,Wenrong Zhuang,Quanchun Li,Bo Zhang,Renqiang Zhu,Jingbo Li,Xinke Liu

DOI: https://doi.org/10.1109/ispsd59661.2024.10579675

2024-01-01

Abstract:The main challenges in current vertical GaN diodes involve electric field crowding effects and ohmic contacts on the nitrogen face (N-Face). Extensive prior research has been conducted in these areas. In this study, we introduced a novel dual-ion (carbon and helium) co-implantation edge termination (ET), aiming to enhance the breakdown voltage $(V_{\text{BR}})$ capability of vertical GaN Schottky barrier diodes (SBDs). Furthermore, atomic layer deposition (ALD) was applied on the N-face to deposit a 1.2 nm aluminum oxide $(\text{AlO}_{x})$ layer, effectively reducing the contact resistance of the ohmic contacts $(\rho_{\mathrm{c}})$ . The fabricated devices exhibit a low turn-on voltage $V_{\text{on}}$ of 0.56 V and a high $I_{\text{on}}/I_{\text{off}}$ of $\sim 10^{9}$ . The introduction of $\text{AlO}_{x}$ mitigates the Fermi-level pinning effect (FLP), reducing the device resistance $R_{\text{on},\text{sp}}$ from 3.01 $\mathrm{m}\Omega\cdot \text{cm}^{2}$ to 1.34 $\mathrm{m}\Omega\cdot \text{cm}^{2}$ . Moreover, the dual-ion co-implantation ET enables the devices to achieve a maximum $V$ BR of 1410 V, resulting in a high figure of merit (FOM) of 1.48 GW/cm 2 .