Abstract:We demonstrate a novel conductivity-controlled junction termination extension (JTE) technique using p-type NiO – a key element for potential commercialization of Ga 2 O 3 power devices without common reliability concerns. The hole concentration of the NiO layer as JTE can be regulated by changing the gas atmosphere during sputtering growth, which can be precisely controlled to maximize the breakdown voltage $(V_{\mathrm{br}})$. The implementation of the JTE results in high-performance vertical $\beta -\mathrm{Ga}_{2} \mathrm{O}_{3}$ Schottky barrier diodes (SBDs), in which the reverse leakage is significantly suppressed, suggesting the effectiveness of p-NiO JTE in reducing fringe electric field. The $\beta -\mathrm{Ga}_{2} \mathrm{O}_{3}$ SBDs with an optimized hole concentration about $10 ^{17}\ \mathrm{cm}^{-3}$ in the JTE region exhibit a low specific on-resistance $(R_{\mathrm{on,sp}})$ of $2.9 \mathrm{m}\Omega \cdot \mathrm{cm}^{2}$ and a high $V_{\mathrm{br}}$ of 2.1 kV, yielding a high power figure-of-merit (PFOM) of 1.52 GW/cm 2 . In addition, a high forward current density of 180 A/cm 2 @2 V and a high breakdown voltage of 1.3 kV for $\beta -\mathrm{Ga}_{2} \mathrm{O}_{3}$ JTE-SBD with area of 0.78 mm 2 were achieved. These results demonstrate the great potential of p-NiO as a controllable and reliable technique for junction engineering in $\beta -\mathrm{Ga}_{2} \mathrm{O}_{3}$ power devices.

High-Performance Vertical $\beta$ -Ga 2 O 3 Schottky Barrier Diode with Implanted Edge Termination

High-Voltage ( $\overline{\text{2}}01$ ) $\beta$ -Ga 2 O 3 Vertical Schottky Barrier Diode with Thermally-Oxidized Termination

Vertical β-Ga 2 O 3 Schottky Barrier Diode with the Composite Termination Structure

Vertical Β-Ga2o3 Schottky Barrier Diode with the Composite Termination Structure

Over 1 GW/cm<SUP>2</SUP> Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes Without Edge Termination

A 1.6 Kv Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

2.5Kv/3.78mω⋅cm² Low Forward Voltage Vertical Β-Ga₂o₃ Schottky Rectifier with Field Plate Assisted Deep Mesa Termination

6 Kv/3.4 Mω·cm2 Vertical Β-Ga2o3 Schottky Barrier Diode with BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC

2.5kV/3.78mΩ·cm 2 Low Forward Voltage Vertical β-Ga 2 O 3 Schottky Rectifier with Field Plate assisted Deep Mesa Termination

Vertical Β-Ga₂o₃ Schottky Barrier Diodes with Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination

Electrical Performance and Reliability Analysis of Vertical Gan Schottky Barrier Diodes with Dual-Ion Implanted Edge Termination

Improved Vertical beta-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension

High-Voltage and High-I ON /I OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

Field-Plated Lateral Β-Ga2o3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 Kv and High DC Power Figure-of-Merit of 500 MW/cm2

2.7 Kv Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination

Improved Β-Ga2o3 Schottky Barrier Diodes Featuring P-Nio Gradual Junction Termination Extension Within Mesa Structure

Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination

High-Performance Vertical Β-Ga2 O3 Schottky Barrier Diodes Featuring P-NiO JTE with Adjustable Conductivity

Improved Vertical Β-Ga2o3 Schottky Barrier Diodes with Conductivity-Modulated P-Nio Junction Termination Extension

1.4-Kv Quasi-Vertical GaN Schottky Barrier Diode with Reverse P-N Junction Termination