Abstract:A vertical GaN power transistor featuring embedded Fin-shaped diode (FDMOS) with intrinsic reverse conduction is proposed. Its static and dynamic performance is investigated by Sentaurus TCAD. Owing to the embedded Fin-shaped diode, the reverse characteristics of the device are independent of the turn-on voltage of the body diode, and thus a low reverse turn-on voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{\mathrm{R},\mathrm{ON}})$</tex> of 0.9 V and a low reverse recovery charge <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(Q_{\mathrm{rr}})$</tex> of 1.36 f.lC is obtained. Benefiting from the removal of MOS structure above the JFET region, the gate charge (Q <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</inf> ) of the FDMOS is also significantly reduced, and thus the lower switching loss is achieved. <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$Q_{\mathrm{GD}}$</tex> is as low as 114 nC/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is only 43% of that in the Con. MOS. The turn-on loss ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$E_{ON}$</tex> ) of the FDMOS reduces by 33.8% in comparison with that of the Con. MOS. In addition, the integration of the Fin-shaped diode reduces the parasitic inductance and the total chip area compared with the conventional method of using an external Schottky diode.

Monolithic Integration of an Algan/Gan Metal-Insulator Field-Effect Transistor with an Ultra-Low Voltage-Drop Diode for Self-Protection

High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al<sub>2</sub>O<sub>3</sub> Gate Dielectric and <i>In Situ</i> Si<sub>3</sub>N<sub>4</sub>-Cap Passivation

Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor with Interdigital Built-In Schottky Barrier Diode

A Drain-Extended AlGaN/GaN MISFET for unidirectional switch

Self-protected GaN power devices with reverse drain blocking and forward current limiting capabilities

Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT with Low Reverse Leakage Current and Low ON-State Resistance

High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

High performance SiC trench-type MOSFET with an integrated MOS-channel diode

Normally-off Fully Recess-Gated GaN Metal–insulator–semiconductor Field-Effect Transistor Using Al2O3/Si3N4 Bilayer As Gate Dielectrics

A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance

<i>p</i>-GaN Gate Power Transistor With Distributed Built-in Schottky Barrier Diode for Low-loss Reverse Conduction

Property of an AlGaN/GaN MIS Diode with Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Gate Dielectric Films

Vertical GaN Power Transistor with Embedded Fin-shaped Diode for High Performance Power Conversion

0.3 V-T/1.1 Kv Algan/Gan Lateral Power Diode with Mis-Gated Hybrid Anode on Silicon Substrate

Reverse-blocking AlGaN/GaN Normally-off MIS-HEMT with Double-Recessed Gated Schottky Drain

Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode.

Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction

On the coupled effect of a MIS-based anode and AlGaN-polarized super-junction to reduce the local electric field for AlGaN/GaN Schottky barrier diodes

Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode

Integration of Lpcvd-Sinx Gate Dielectric with Recessed-Gate E-Mode Gan Mis-Fets: Toward High Performance, High Stability and Long Tddb Lifetime

A Novel Ultra-thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-temperature Reverse Blocking Characteristic