Abstract:The mechanical strengths of silicon wafers are crucial for the manufacturing yield of integrated circuits (ICs), which have received intensive attention over the years. With reducing the feature size of ICs, the mechanical strengths of silicon wafers become more significant. Actually, the gliding of indentation dislocations on single-crystalline silicon wafers at a given temperature reflects the mechanical strengths of silicon wafers. Since the gliding of indentation dislocations is driven by the residual stress around the indentation, the investigation on the correlation between the residual stress and dislocation gliding is of significance. In this paper, we first use micro-Raman microscopy to characterize the relief of stress around the indentation due to the annealling at 300 or 500 ℃. Then the effect of such a relief-stress on the gliding of indentation dislocations at 700-900 ℃ is investigated. In the case without the prior stress-relief, the indentation dislocations glide to the maximum distance after 2 h annealling at 700-900 ℃. With the prior stress-relief due to the annealling at 300 or 500 ℃, the indentation dislocations can still glide to the maximum distance after 2 h annealling at 900 ℃, however the gliding velocity significantly decreases and the gliding distance is remarkably reduced after 2 h annealling at 700 or 800 ℃. Such a reduction of gliding distance is most significant in the case of 700 ℃ annealling following the stress-relief with the 500 ℃/2 h annealling. Despite the prior stress-relief, as long as the annealing time at 700 or 800 ℃ is sufficiently extended, the indentation dislocations can glide to the maximum distance. In view of the above results, it is believed that the maximum gliding distance of indentation dislocations at a given temperature is independent of the values of residual stress around the indentation provided that the residual stresses are larger than the critical stress for driving the dislocation movement. Nevertheless, the annealing time for achieving the maximum gliding distance at a given temperature should be remarkably extended as the residual stresses around the indentation are relieved.

Stress calculation and analysis of uniaxially strained silicon on the insulator

Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Conversion of strain state from biaxial to uniaxial in strained silicon

Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Process Characterization for Strained Si on SOI CMOS Devices

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams

Analysis of the Stress-Optical Effects in Silica-on-silicon Optical Waveguides

Effect of Prior Stress-Relief on the Gliding of Indentation Dislocations on Silicon Wafers

Numerical analysis of silicon-on-insulator ridge nanowires by using a full-vectorial finite-difference method mode solver

Simulation Of Near-Crack-Tip Strain Fields On Single-Crystal Silicon Wafer

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Strain redistribution in free-standing bridge structure released from strained silicon-on-insulator

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Electrical Properties of Strained Si P-N Junctions

Impacts of Additive Uniaxial Strain on Hole Mobility in Bulk Si and Strained-Si P-Mosfets

Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy