Abstract:The epitaxial deposition of a 3C-SiC film on a (100) Si substrate has been achieved at low temperature in one step using the microwave plasma CVD technique. A high density of defects such as misfit dislocations, stacking faults (SF) and twin boundaries (TB) is generated in the film. Defect-induced strain distribution in the 3C-SiC film is analyzed by the geometric phase analysis (GPA) method combined with X-ray diffraction (XRD) and Raman spectroscopy. The strain analysis at an atomic level reveals that periodical misfit dislocations at the interface generate high local compressive strain (>20%) around the core of the dislocations in the SiC film, relaxing the major part of the intrinsic strain. A highly compressive interfacial layer is found to form between the SiC film and Si substrate regardless of the carbonization temperature. This interfacial layer is linked with the carbonization step of the film growth process. In addition, twins and stacking faults provide a complementary route for strain relaxation during the film growth process. It is found that more strain is accommodated at the matrix/twin interface during twin nucleation rather than that at the growth stage. The atomic understanding of the effects of crystalline defects on strain relaxation will provide important implications for the control of defects in SiC films and design of high-performance SiC devices.

Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-Sic Films

Epitaxial Sic Grown on Silicon-On-Insulator Substrate with Ultra-Thin Silicon-Over-Layer

3C-SiC Growth on SOI with High Silicon-Over-Layer

Residual Stress Characterization of Polycrystalline 3C-Sic Films on Si(100) Deposited from Methylsilane

Stress Reduction in GaN Films on (111) Silicon-on-insulator Substrate Grown by Metal–organic Chemical Vapor Deposition

Defect-Induced Strain Relaxation in 3C-Sic Films Grown on A (100) Si Substrate at Low Temperature in One Step

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

Growth of SiC Buffers for Strained Si Film Epitaxy

Raman Investigatins of 3C-Sic Films Grown on Si (100) and Sapphire (0001) by LPCVD

Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Strain relaxation in patterned strained silicon directly on insulator structures

Raman Microprobe Mapping of Residual Microstresses in 3C-Sic Film Epitaxial Lateral Grown on Patterned Si(1 1 1)

Effect of Different Si/C Flux Ratios on the Growth of Sic on Si (111) by Ssmbe

Strain Accommodation of 3c–sic Grown on Hydrogen-Implanted Si (001) Substrate

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy

Effect Of Si/C Flux Ratio On The Growth Of 3c-Sic On Si (111) By Ssmbe

Residual Stresses and Mechanical Properties of Si 3 N 4 /sic Multilayered Composites with Different SiC Layers

Strain Relaxation in Ultrathin SGOI Substrates Fabricated by Multistep Ge Condensation Method