Abstract:Si-doped GaN films were grown epitaxially on c-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N2 in Ar–N2 growth atmosphere. Energy dispersive x-ray spectroscopy revealed ∼2 at.% Si in all the films, but the N/Ga ratio decreased substantially as N2 percentage was reduced from 100% to 10%. The lattice parameters (a and c) were obtained independently to determine the in-plane and out-of-plane components of strain in films, which were analyzed to deduce the hydrostatic and biaxial strain contributions. High resolution x-ray diffraction revealed the dominant presence of edge dislocations (∼1012 cm−2) in the films grown at 30%–100% N2, which decreases and becomes comparable to the density of screw dislocations (∼1011 cm−2) at lower N2 percentages. The films grown at 75%–100% N2 displayed compressive biaxial stress along with large hydrostatic strain and micro-strain due to the incorporation of nitrogen at interstitial locations and grain boundaries. Both hydrostatic strain and micro-strain decrease in the films grown below 75% N2, in which, a reversal of biaxial stress to tensile is seen due to the prevalence of in-plane tensile stress generated during coalescence. The decrease of tensile stress in films grown below 30% N2, accompanied by increase in micro-strain and hydrostatic strain are ascribed to Ar incorporation and voided morphology. The presence of Si does not have a significant influence on residual stress of films and appears to be masked by the dominant growth-related intrinsic effects.

Stress Reduction in GaN Films on (111) Silicon-on-insulator Substrate Grown by Metal–organic Chemical Vapor Deposition

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Effects Of Surface Stress On The Phonon Properties In Gan Nanofilms

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Study of residual stress in reactively sputtered epitaxial Si-doped GaN films

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Effect of Indium-Doped Interlayer on the Strain Relief in GaN Films Grown on Si(111)

Residual stress characterization of GaN microstructures using bent-beam strain sensors

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate

Direct van der Waals epitaxy of stress-free GaN films on PECVD grown graphene

Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition