Abstract:The strong piezoelectric field present in InGaN/GaN heterostructure quantum wells severely reduces the light emission efficiency of multiple quantum well (MQW) structures. To address this issue, a strain modulation interlayer is commonly used to mitigate the piezoelectric polarization field and improve the luminescence performance of the devices. To investigate the impact and mechanism of strain modulation in the InGaN/GaN superlattice (SL), epitaxial wafers were fabricated with an n-type InGaN/GaN SL interlayer sample, along with a corresponding control sample. By measuring the temperature-dependent photoluminescence (PL) spectra of the epitaxial wafers, experimental results show that the introduction of an SL interlayer leads to a shorter emission wavelength and an enhanced internal quantum efficiency. As the temperature increases, a blue shift of the PL peak is observed. However, for the sample with an SL interlayer, the blue shift of the PL peak with temperature is relatively small. Electroluminescence (EL) experiments indicate that the introduction of an SL interlayer significantly increases the integrated intensity of the EL peak and reduces its full width at half maximum. These phenomena collectively suggest that the incorporation of a superlattice interlayer can partially suppress the quantum-confined Stark effect (QCSE) that affects the light emission efficiency. Theoretical calculations demonstrated that the introduction of a superlattice strain layer before the growth of the multiple quantum well active region can weaken the polarization-induced built-in electric field, reduce the tilt of the energy bands in the multiple quantum well active region, increase the overlap of electron and hole wave functions, enhance the emission probability, shorten the radiative recombination lifetime, and promote competition between radiative and non-radiative recombination, thereby achieving higher recombination efficiency and improved light emission intensity. This study provides experimental and theoretical evidence that the strain modulation SL interlayer can effectively improve the device performance and offer guidance for optimizing the structural design of devices.

Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate

GaN LEDs on Si Substrate

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes

Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film

Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films

Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer

Vertical Electrode Structure GaN Based Light Emitting Diodes

Study on the strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well

Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

Enhanced performance of GaN-based LEDs via electroplating of a patterned copper layer on the backside

633-Nm InGaN-based Red LEDs Grown on Thick Underlying GaN Layers with Reduced In-Plane Residual Stress

Optically and Electrically Invariant Multi-color Single InGaN/GaN Nanowire Light-emitting Diodes on Silicon Substrate under Mechanical Compression

Ingan/Gan Blue Light Emitting Diodes Grown on Si(110) and Si(111) Substrates

Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs