Abstract:Si films were grown on SiC (111) substrate by solid-source molecular beam epitaxy (SSMBE) at different Si/C flux ratios. The structure characteristics of SiC films were investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscope (AFM) and Fourier transform infrared spectroscope (FTIR). For the sample grown at Si/C flux ratio (1.1:1.0), ring patterns and twin spots are observed in RHEED and the full width at half maximum (FWHM) of the rocking curve is 2.1 degrees. For the sample grown at Si/C flux ratio(2.3:1.0), the Si spots coexist with SiC spots in the RHEED and the FWHM of the rocking curve is 1.5 degrees. For these two Si/C flux ratios, there are voids and rough surface observed in AFM and large strain exists shown in the FTIR spectra. However, for the sample grown at the Si/C flux ratio (1.5:1.0), besides SiC streaks, a (3x3) surface reconstruction can be observed in RHEED and no SiC twin spots are observed. The results of XRD show that the FWHM of the rocking curve is just 1.1 degrees. The AFM results indicate that the surface of the sample is even and there are no obvious voids. While the results of FTIR show that the strain in the film is small. Therefore, the optimized Si/C flux ratio is 1.5:1.0, and the quality of the film grown at the optimized Si/C flux ratio is the best.

Raman Investigatins of 3C-Sic Films Grown on Si (100) and Sapphire (0001) by LPCVD

Study on 3C-Sic/si(111) by X-Ray Grazing Incident Diffraction

Controlled-Growth and Characterization of 3C-Sic and 6H-Sic Films on C-Plane Sapphire Substrates by Lpcvd

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD

Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-Sic Films

Infrared Reflectance Study of 3C-Sic Epilayers Grown on Silicon Substrates

Microstructure and texture of polycrystalline 3C–SiC thick films characterized via EBSD

Uniformity Investigation in 3C-Sic Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Effect Of Si/C Flux Ratio On The Growth Of 3c-Sic On Si (111) By Ssmbe

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy

Effect of Different Si/C Flux Ratios on the Growth of Sic on Si (111) by Ssmbe

3C-SiC Growth on SOI with High Silicon-Over-Layer

Growth of 3C-Sic Films on On-axis 6H-Sic Substrates by LPCVD

Novel Electrical Characterization of Thin 3C-Sic Films on Si Substrates

The Growth of Si on Sic Complex Substrate by Cvd

Raman spectroscopy of epitaxial graphene on a SiC substrate