Abstract:Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

Strain Accommodation of 3c–sic Grown on Hydrogen-Implanted Si (001) Substrate

The Role of Strain in Hydrogenation Induced Cracking in Si∕Si1−xGex∕Si Structures

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-Sic Films

Plasma Hydrogenation of Strain-Relaxed SiGe∕Si Heterostructure for Layer Transfer

In–situ strain control in epitaxial silicon carbide compound semiconductor

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Growth of SiC Buffers for Strained Si Film Epitaxy

Defect free strain relaxation of microcrystals on mesoporous patterned silicon

The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Residual Stress Characterization of Polycrystalline 3C-Sic Films on Si(100) Deposited from Methylsilane

H DISTRIBUTION AND STRAIN EVOLUTION IN SiGe/Si HETEROSTRUCTURE IMPLANTED BY H DIMERS

High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

H-Induced Platelet And Crack Formation In Hydrogenated Epitaxial Si/Si0.98b0.02/Si Structures

3C-SiC Growth on SOI with High Silicon-Over-Layer

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

Strain release in GaN epitaxy on 4° off‐axis 4H‐SiC