Abstract:The stress state is a crucial parameter for the design of innovative microelectromechanical systems based on silicon carbide (SiC) material. Hence, mechanical properties of such structures highly depend on the fabrication process. Despite significant progresses in thin-film growth and fabrication process, monitoring the strain of the suspended SiC thin-films is still challenging. However, 3C-SiC membranes on silicon (Si) substrates have been demonstrated, but due to the low quality of the SiC/Si heteroepitaxy, high levels of residual strains were always observed. In order to achieve promising self-standing films with low residual stress, an alternative micromachining technique based on electrochemical etching of high quality homoepitaxy 4H-SiC layers was evaluated. This work is dedicated to the determination of their mechanical properties and more specifically, to the characterization of a 4H-SiC freestanding film with a circular shape. An inverse problem method was implemented, where experimental results obtained from bulge test are fitted with theoretical static load-deflection curves of the stressed membrane. To assess data validity, the dynamic behavior of the membrane was also investigated: Experimentally, by means of laser Doppler vibrometry (LDV) and theoretically, by means of finite element computations. The two methods provided very similar results since one obtained a Young's modulus of 410 GPa and a residual stress value of 41 MPa from bulge test against 400 GPa and 30 MPa for the LDV analysis. The determined Young's modulus is in good agreement with literature values. Moreover, residual stress values demonstrate that the fabrication of low-stressed SiC films is achievable thanks to the micromachining process developed.

Residual Stress Characterization of Polycrystalline 3C-Sic Films on Si(100) Deposited from Methylsilane

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Strain Reducing in 3C-Sic Film Growth on Si Substrate

Defect-Induced Strain Relaxation in 3C-Sic Films Grown on A (100) Si Substrate at Low Temperature in One Step

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-Sic Films

Formation of stress-controlled, highly textured, α-SiC thin films at 950 °C

Growth and characterization of nitrogen-doped polycrystalline 3C-SiC thin films for harsh environment MEMS applications

Effect of Carbonized Conditions on Residual Strain and Crystallinity Quality of Heteroepitaxial Growth 3C-Sic Films

Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon

Combined Structural and Optical Assessment of CVD Grown 3C-Sic/si

Raman Microprobe Mapping of Residual Microstresses in 3C-Sic Film Epitaxial Lateral Grown on Patterned Si(1 1 1)

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Investigation of the Young's Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates

Low-Temperature Photoluminescence Studies of Chemical-Vapor-Deposition-Grown 3C-Sic on Si

Residual Stress in Amorphous and Nanocrystalline Si Films Prepared by PECVD with Hydrogen Dilution

Microstructure and texture of polycrystalline 3C–SiC thick films characterized via EBSD

Stress Control and Anti-erosion Characteristics of PECVD SiC Thin Film

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

Influence of Supersaturation on Growth Behavior and Mechanical Properties of Polycrystalline 3C-Sic on W Wire Substrate

Structural Characteristics of 3c–sic Thin Films Grown on Si-face and C-face 4h–sic Substrates by High Temperature Chemical Vapor Deposition