Abstract:With the size of transistors scaling down, 3D IC packaging emerged as one of the most promising solutions to achieve system integration on the track of Moore's Law. In this article, we demonstrated a sub-system with one 28nm logic device and two 40nm chips on a 600mm2 silicon interposer with Through-Silicon-Via (TSV) integrating 4 layers of high density interconnects. The packages were assembled using our proprietary CoWoS (Chip on Wafer on Substrate) technology that incorporated 270,000 micro-bump (μBump) and 8,700 C4 bumps. Comprehensive reliability characterization and test methods will be presented. It includes copper interconnect reliability of silicon interposer on EM, SM and IMD TDDB with the presence of TSV. μBump EM and TSV EM are characterized to provide a design guideline for maximum current carrying capability; the EM test methodology was also used to optimize the integrated process, e.g. TSV copper plating, μBump joint, and interface treatment of TSV revealing. Package process optimization, bill of material selectio n and qualificatio n we r e conducted on a 28nm Cu/ELK (Extreme low-K) test vehicle taking Chip-Package-Interaction into consideration. Not only component level package reliability tests were performed, board level Thermal Cycling, Power Cycling and Mechanical Shock tests were also executed to understand the reliability margin and potential failure modes in field use condition. The typical failure modes and mechanisms will be discussed. CoWoS technology is eventually successfully developed with enhanced reliability. The results highlight the importance of a highly integrated 3D IC technology from silicon wafer process to assembly packaging. This work shows that in the new paradigm of 3D IC integration, Si Foundry is positioned at a unique leadership to manage the innovation in Si processes and the improvement of Si assembly operating life.

Survey on Testing Methods for 3D IC

Testing 3D chips containing through-silicon vias

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Yield-aware Time-Efficient Testing and Self-Fixing Design for TSV-based 3D ICs

Challenges for Progress in Test and Design for Testability

Self-test methodology and structures for pre-bond TSV testing in 3D-IC system

BIST Methodology, Architecture and Circuits for Pre-Bond TSV Testing in 3D Stacking IC Systems

A thermal-driven test application scheme for pre-bond and post-bond scan testing of three-dimensional ICs

Three Dimensional ICs Thermal-Driven Test Application Scheme

A Thermal-Driven Test Application Scheme for 3-Dimensional ICs

A 3D Integration Testing Vehicle with TSV Interconnects

Design and Fabrication of a Test Chip for 3D Integration Process Evaluation

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Testing Structure for Detection of Poly Stringer Defects in CMOS ICs

An improved method for test chip design

In-line Testing of Blind TSVs for 3D IC Integration and M/NEMS Packaging

A Fully Automated Large-Scale Addressable Test Chip Design with High Reliability

Three-dimensional Integrated Circuits: Design, EDA, and Architecture

Thermal-mechanical Reliability Assessment of TSV Structure for 3D IC Integration

Reliability characterization of Chip-on-Wafer-on-Substrate (CoWoS) 3D IC integration technology