Preparation of Zirconium Silicate Film and its Oxidation Resistance

Guangfan TAN,Qing HU,Weihui JIANG,Jianmin LIU,Guo FENG,Ting CHEN,Qian WU
DOI: https://doi.org/10.13957/j.cnki.tcxb.2017.06.014
2017-01-01
Journal of Ceramics
Abstract:Zirconium silicate (ZrSiO4) film with oxidation resistance was prepared via non-hydrolytic sol-gel method (NHSG) combining dip coating process using zirconium tetrachloride (ZrCl4) as zirconium source and tetraethyl orthosilicate as (TEOS) silicon source. The effects of the precursor concentration, coating times and tetrabutylammonium bromide (TBAB) on the morphology and thickness of ZrSiO4 film were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results showed that the smooth and dense ZrSiO4 film (300 nm) without cracking was obtained on SiC substrate when the precursor concentration was 0.6 mol/L, coating times was 4 and the amount of TBAB was 7 wt.%. The ZrSiO4 film has good high temperature oxidation resistance holding at 1450 ℃.
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