Low-temperature Processing of High-Performance Transparent Ultra-Thin ZrAlOx Hybrid Dielectric Films Via Solution Self-Combustion Synthesis and Application in TFTs
Zihan Zhang,Guoping Su,Honglong Ning,Yuexin Yang,Xuecong Fang,Bocheng Jiang,Yonglin Yang,Weixin Cheng,Rihui Yao,Junbiao Peng
DOI: https://doi.org/10.1016/j.jallcom.2024.176302
IF: 6.2
2024-01-01
Journal of Alloys and Compounds
Abstract:In the realm of electronic applications, there is a pronounced interest in developing high-performance metal oxides via solution processes. Traditional sol-gel techniques, however, are constrained by their reliance on high thermal processing conditions. This study presents a novel approach for fabricating ZrAlOx hybrid dielectric thin films at low temperature utilizing a solution self-combustion process, which involves the coordination of Zr and Al salts with oxidizer and fuel ligands. Thermal analysis of the ZrAlOx precursors indicated that self-combustion occurs at approximately 180 °C, supplying the necessary internal energy to facilitate the formation of metal oxides. This internal energy enables both the conversion of precursors and the elimination of organic impurities with reduced external energy demand, significantly lowering the required annealing temperature. Additionally, the impact of composition ratio of oxidizer (zirconium nitrate) to fuel (aluminum acetylacetonate) was investigated. Results demonstrated that an equivalent ratio of oxidizer to fuel produced the most vigorous self-combustion reaction, thus generating the maximal internal energy needed to compensate for the formation energies of the M-O-M structure. At a low annealing temperature of 180 °C, the resultant amorphous ZrAlOx thin films, synthesized under the stoichiometric condition, displayed the dense, smooth, and pore-free morphology with an ultra-thin thickness of only 11.6nm. MIM device incorporating this as the dielectric layer exhibited electrical properties comparable to that achieved with expensive vacuum deposition techniques, including low leakage current density of 2.81×10-8A/cm2 at 1MV/cm, high capacitance density of 1133 nF/cm2 at 1kHz, and substantial relative dielectric constant of 14.71. Finally, the high-performance TFT utilizing ZrAlOx dielectric was achieved, demonstrating high mobility of 33.05cm²/Vs, Ion/Ioff of 5.10×105, and low-voltage operational characteristics with Vth of only 0.21V. Therefore, the solution self-combustion synthesis method delineated in this study offers promising potential for utilization in the burgeoning fields of flexible and stretchable electronics.