Abstract:Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate advanced electronic circuits is a major goal for the semiconductors industry 1-2 . However, most studies in this field have been limited to the fabrication and characterization of isolated large (>1μm 2 ) devices on unfunctional SiO 2 /Si substrates. Some studies integrated monolayer graphene on silicon microchips as large-area (>500μm 2 ) interconnection 3 and as channel of large transistors (~16.5μm 2 ) 4-5 , but in all cases the integration density was low, no computation was demonstrated, and manipulating monolayer 2D materials was challenging because native pinholes and cracks during transfer increase variability and reduce yield. Here we present the fabrication of high-integration-density 2D/CMOS hybrid microchips for memristive applications — CMOS stands for complementary metal oxide semiconductor. We transfer a sheet of multilayer hexagonal boron nitride (h-BN) onto the back-end-of-line (BEOL) interconnections of silicon microchips containing CMOS transistors of the 180nm node, and finalize the circuits by patterning the top electrodes and interconnections. The CMOS transistors provide outstanding control over the currents across the h-BN memristors, which allows us to achieve endurances of ~5 million cycles in memristors as small as ~0.053μm 2 . We demonstrate in-memory computation by constructing logic gates, and measure spike-timing dependent plasticity (STDP) signals that are suitable for the implementation of spiking neural networks (SNN). The high performance and the relatively-high technology readiness level achieved represent a significant advance towards the integration of 2D materials in microelectronic products and memristive applications.

Monolithic 3D integration with 2D materials

Monolithic and heterogeneous three-dimensional integration of two-dimensional materials with high-density vias

Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Monolithic-3D Integration with 2D Materials: Toward Ultimate Vertically-Scaled 3D-ICs

Three-dimensional integrated metal-oxide transistors

Optimizing Ultra‐thin 2D Transistors for Monolithic 3D Integration: A Study on Directly Grown Nanocrystalline Interconnects and Buried Contacts

Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions

Advanced Hybrid 2D/CMOS Microchips Toward the Semiconductor Industry.

Simultaneous synthesis and integration of two-dimensional electronic components

Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory

Large-scale Chemical Assembly of Atomically Thin Transistors and Circuits

Vertical Integration of 2D Building Blocks for All‐2D Electronics

Chemical assembly of atomically thin transistors and circuits in a large scale

Hybrid 2D/CMOS microchips for memristive applications

Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann CMOS

Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET

3D integration proceeds tier-by-tier

Monolithic three-dimensional tier-by-tier integration via van der Waals lamination

Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system

Creating 3D hardware with stacked 2D devices