Abstract:Two and three-dimensional (2D/3D) hybrid materials have the potential to advance communication and sensing technologies by enabling new or improved device functionality. To date, most 2D/3D hybrid devices utilize mechanical exfoliation or post-synthesis transfer, which can be fundamentally different from directly synthesized layers that are compatible with large scale industrial needs. Therefore, understanding the process/property relationship of synthetic heterostructures is priority for industrially relevant material architectures. Here we demonstrate the scalable synthesis of molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) via metal organic chemical vapor deposition (MOCVD) on gallium nitride (GaN), and elucidate the structure, chemistry, and vertical transport properties of the 2D/3D hybrid. We find that the 2D layer thickness and transition metal dichalcogenide (TMD) choice plays an important role in the transport properties of the hybrid structure, where monolayer TMDs exhibit direct tunneling through the layer, while transport in few layer TMDs on GaN is dominated by p-n diode behavior and varies with the 2D/3D hybrid structure. Kelvin probe force microscopy (KPFM), low energy electron microscopy (LEEM) and X-ray photoelectron spectroscopy (XPS) reveal a strong intrinsic dipole and charge transfer between n-MoS2 and p-GaN, leading to a degraded interface and high p-type leakage current. Finally, we demonstrate integration of heterogeneous 2D layer stacks of MoS2/WSe2 on GaN with atomically sharp interface. Monolayer MoS2/WSe2/n-GaN stacks lead to near Ohmic transport due to the tunneling and non-degenerated doping, while few layer stacking is Schottky barrier dominated.

Monolithic and heterogeneous three-dimensional integration of two-dimensional materials with high-density vias

Monolithic 3D integration with 2D materials

Towards 3-D Carbon-Based Heterogeneous Interconnects

Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Modeling and Characterization of Carbon-Based Heterogeneous Interconnects for 3-D Ics

Electrical Modeling of Three-Dimensional Carbon-Based Heterogeneous Interconnects

Monolithic-3D Integration with 2D Materials: Toward Ultimate Vertically-Scaled 3D-ICs

Three-dimensional integrated metal-oxide transistors

3D integration proceeds tier-by-tier

Monolithic three-dimensional tier-by-tier integration via van der Waals lamination

Vertically stacked van der Waals heterostructures for three-dimensional circuitry elements

Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions

Technologies for 3D Heterogeneous Integration

Optimizing Ultra‐thin 2D Transistors for Monolithic 3D Integration: A Study on Directly Grown Nanocrystalline Interconnects and Buried Contacts

Heterogeneous Integration of MEMS Sensor Array and CMOS Readout IC with Through Silicon Via Interconnects

Mono 3 D to Develop Large-Scale Monolithic 3 D Integrated Circuits

Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides

Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

Vertical Integration of 2D Building Blocks for All‐2D Electronics

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts