Abstract:As Moore's law is running out of steam, advanced packaging has taken leadership to drive performance. On the one hand, the die area is constantly reduced especially for small package sizes and heterogeneous integration with high interconnect density becomes crucial. This is for example the case in IoT or mobile applications. On the other side, for large packages sizes heterogeneous integration and die segmentation gets an increasing role of processing applications. Here, heterogeneous integration leads to an overall increased yield, mainly as smaller dies generally can be produced with higher yield. In the same time and most importantly, memory, processors, sensors and such from different sources can be combined using heterogeneous integration. Combining segmented dies in an advanced package can be done by two different bonding technologies, namely sequential die bonding or a collective die bonding approach. For the collective bonding, individual dies are populated and tacked either on an interposer or a so-called handling carrier, depending on the bonding technology applied. In case of tacking die face-down on an interposer or other active silicon die, bonding is usually being done by thermal bonding. Here, heating and cooling of the substrates are only done once, considerably reducing process cost and thermal budget of the underlying substrate. The second case is tacking the dies face up on a carrier substrate. This reconstructed dies on a carrier can now be processes again on wafer scale, this means preprocessing steps such as direct bonding can be done before bonding the wafers using fusion or hybrid bonding. In this paper, we will show different integration approaches for collective die bonding for both thermal bonding as well as fusion / hybrid bonding. For both processes, results in terms of die placement and sequential alignment accuracy of the integrated process will be compared and discussed, together with current and potential applications of these processes for future devices.

Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

Large-area transfer of two-dimensional materials free of cracks, contamination and wrinkles via controllable conformal contact

Wafer bonding solution to epitaxial graphene - silicon integration

Van der Waals integration before and beyond two-dimensional materials

Graphene-enabled, directed nanomaterial placement from solution for large-scale device integration

3D integration proceeds tier-by-tier

Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration

Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors

Fabrication methods for integrating 2D materials

Heteroepitaxy of Semiconducting 2H-Mote2 Thin Films on Arbitrary Surfaces for Large-Scale Heterogeneous Integration

Facile fabrication of 2D material multilayers and vdW heterostructures with multimodal microscopy and AFM characterization

Heterogeneous Integration by Collective Die-To-Wafer Bonding

Scalable synthesis of 2D van der Waals superlattices

Monolithic and heterogeneous three-dimensional integration of two-dimensional materials with high-density vias

Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation

Large‐Area Artificial van der Waals "Mille‐Feuille" Superlattices

Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration

Fabrication Technologies for the On‐Chip Integration of 2D Materials