Abstract:As the trajectory of transistor scaling defined by Moore's law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high- κ dielectrics. Furthermore, the uniform growth of wafer-scale 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review examines the latest breakthroughs with a focus on the preparation of 2D channel materials and device engineering in advanced FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D FETs. These findings extend to potential integrated circuit applications in diverse functionalities.

Fabrication methods for integrating 2D materials

Fabrication Technologies for the On‐Chip Integration of 2D Materials

From lab to fab: path forward for 2D material electronics

The development of integrated circuits based on two-dimensional materials

Two‐Dimensional Semiconductors: from Device Processing to Circuit Integration

Two-dimensional devices and integration towards the silicon lines

Nanopatterning Technologies of Two‐Dimensional Materials for Integrated Electronic and Optoelectronic Devices

Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

2D materials for logic device scaling

The Roadmap of 2D Materials and Devices Toward Chips

Towards Scalable Fabrications and Applications of 2D Layered Material-based Vertical and Lateral Heterostructures

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Strategy for transferring van der Waals materials and heterostructures

Advanced Hybrid 2D/CMOS Microchips Toward the Semiconductor Industry.

Interfacial Engineering for Fabricating High‐Performance Field‐Effect Transistors Based on 2D Materials

Recent Progress in the Fabrication, Properties, and Devices of Heterostructures Based on 2D Materials

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

Nanopatterning Technologies of 2D Materials for Integrated Electronic and Optoelectronic Devices (Adv. Mater. 52/2022)

Van der Waals integration before and beyond two-dimensional materials

Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives

Highly Accurate, Reliable and Non-Contaminating Two-Dimensional Material Transfer System