Abstract:The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. While a tremendous amount of research activity has occurred in assembling disparate 2D materials into "all-2D" van der Waals heterostructures and making outstanding progress on fundamental studies, practical applications of 2D materials will require a broader integration strategy. I will present our ongoing and recent work on integration of 2D materials with 3D electronic materials to realize logic switches and memory devices with novel functionality that can potentially augment the performance and functionality of Silicon technology. First, I will present our recent work on gate-tunable diode 1 and tunnel junction devices 2 based on integration of 2D chalcogenides with Si and GaN. Following this I will present our recent work on non-volatile memories based on Ferroelectric Field Effect Transistors (FE-FETs) made using a heterostructure of MoS 2 /AlScN 3 and I also will present our work on Ferroelectric Diode (ferrodiode) devices 4 also based on thin AlScN. If time permits, I will also cover our ongoing efforts in scaling FE-FETs based on MoS 2 and AlScN to < 100 nm channel lengths over large areas and also discuss in-memory computing using ferrodiode devices and also touch upon our efforts in photonics and light trapping using 2D semiconductors. I will end by giving a broad perspective on future opportunities of 2D semiconductors in micro and nanoelectronics. References: Miao, J.; Liu, X.; Jo, K.; He, K.; Saxena, R.; Song, B.; Zhang, H.; He, J.; Han, M.-G.; Hu, W.; Jariwala, D. Nano Letters 2020, 20, (4), 2907-2915. Miao, J.; Leblanc, C.; Liu, X.; Song, B.; Zhang, H.; Krylyuk, S.; Davydov, A. V.; Back, T.; Glavin, N. R.; Jariwala, D.,2D Metal Selenide-Silicon Steep Sub-Threshold Heterojunction Triodes with High On-Current Density arXiv:2111.06396 Liu, X.; Wang, D.; Zheng, J.; Musavigharavi, P.; Miao, J.; Stach, E. A.; Olsson III, R. H.; Jariwala, D. Nano Letters 2021, 21, 3753–3761. Liu, X.; Zheng, J.; Wang, D.; Musavigharavi, P.; Stach, E. A.; Olsson III, R.; Jariwala, D. Applied Physics Letters 2021, 118, 202901

Nanopatterning Technologies of Two‐Dimensional Materials for Integrated Electronic and Optoelectronic Devices

Nanopatterning Technologies of 2D Materials for Integrated Electronic and Optoelectronic Devices (Adv. Mater. 52/2022)

From lab to fab: path forward for 2D material electronics

Two-dimensional devices and integration towards the silicon lines

Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges

The Road for 2D Semiconductors in the Silicon Age

2D Nanomaterial Arrays for Electronics and Optoelectronics

The Roadmap of 2D Materials and Devices Toward Chips

Two‐Dimensional Semiconductors: from Device Processing to Circuit Integration

Two-dimensional materials for future information technology: status and prospects

2D Semiconductors for Specific Electronic Applications: from Device to System

Residue-free Wafer-Scale Direct Imprinting of Two-Dimensional Materials

Two-dimensional materials for next-generation computing technologies

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

The development of integrated circuits based on two-dimensional materials

Electronics Based on Two-Dimensional Materials: Status and Outlook

2D Materials for Intelligent Devices

Two-dimensional optoelectronic devices for silicon photonic integration

(Invited) 2D Dimensional Quantum Materials for CMOS and Beyond CMOS Devices

Fabrication Technologies for the On‐Chip Integration of 2D Materials

Advanced Hybrid 2D/CMOS Microchips Toward the Semiconductor Industry.