Abstract:A reliable one‐step van der Waals integration technique is developed for centimeter‐scale transfer printing of multilayer top‐gate stacks. This technique enables the realization of superior electrical performance and threshold voltage control in MoS2 transistors. Depletion‐mode Al‐gated transistors and enhancement‐mode Au‐gated transistors are utilized to construct inverters, logic gates, static random‐access memory, and ring oscillators, demonstrating the functionality of multi‐threshold 2D circuits. Transition‐metal dichalcogenides (TMDs), as atomically thin semiconductors, have shown immense promise for next‐generation electronics due to their high mobility and potential for creating van der Waals heterostructures. However, precise control of the threshold voltage (Vth) in field‐effect transistors (FETs) remains a significant challenge, impeding the development of 2D material circuits with tailored electronic functions. Herein, a graphene‐assisted one‐step van der Waals integration technique is presented for fabricating multi‐threshold 2D functional circuits. Graphene's unique property of having a surface without dangling bonds is utilized as an intermediary layer, allowing for the transfer of electrodes with various work functions and high‐κ dielectric layers onto 2D channel materials in a single step. This technique has successfully produced Al‐gated MoS2 FETs with a Vth of −0.2 V and Au‐gated MoS2 FETs with a Vth of 1.9 V. This precision enables the development of functional devices such as rail‐to‐rail inverters with large noise margins. Furthermore, more complex multi‐threshold 2D circuits are achieved, including basic logic gates (NOT, NAND, NOR), six‐transistor static random‐access memory (6T‐SRAM), and ring oscillators (RO). This work showcases a scalable and effective strategy for threshold voltage engineering in 2D material‐based circuits, paving the way for sophisticated electronic and optoelectronic applications.

3D integration proceeds tier-by-tier

Monolithic three-dimensional tier-by-tier integration via van der Waals lamination

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Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

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Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

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Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

Monolithic 3D integration with 2D materials

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Monolithic-3D Integration with 2D Materials: Toward Ultimate Vertically-Scaled 3D-ICs

12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition