Abstract:Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate advanced electronic circuits is a major goal for the semiconductors industry 1-2 . However, most studies in this field have been limited to the fabrication and characterization of isolated large (>1μm 2 ) devices on unfunctional SiO 2 /Si substrates. Some studies integrated monolayer graphene on silicon microchips as large-area (>500μm 2 ) interconnection 3 and as channel of large transistors (~16.5μm 2 ) 4-5 , but in all cases the integration density was low, no computation was demonstrated, and manipulating monolayer 2D materials was challenging because native pinholes and cracks during transfer increase variability and reduce yield. Here we present the fabrication of high-integration-density 2D/CMOS hybrid microchips for memristive applications — CMOS stands for complementary metal oxide semiconductor. We transfer a sheet of multilayer hexagonal boron nitride (h-BN) onto the back-end-of-line (BEOL) interconnections of silicon microchips containing CMOS transistors of the 180nm node, and finalize the circuits by patterning the top electrodes and interconnections. The CMOS transistors provide outstanding control over the currents across the h-BN memristors, which allows us to achieve endurances of ~5 million cycles in memristors as small as ~0.053μm 2 . We demonstrate in-memory computation by constructing logic gates, and measure spike-timing dependent plasticity (STDP) signals that are suitable for the implementation of spiking neural networks (SNN). The high performance and the relatively-high technology readiness level achieved represent a significant advance towards the integration of 2D materials in microelectronic products and memristive applications.

Creating 3D hardware with stacked 2D devices

Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory

Vertically stacked van der Waals heterostructures for three-dimensional circuitry elements

Monolithic 3D integration with 2D materials

Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Monolithic and heterogeneous three-dimensional integration of two-dimensional materials with high-density vias

Hybrid 2D/CMOS microchips for memristive applications

Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing

Programmable Multilevel Memtransistors Based on van der Waals Heterostructures

Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

3D integration proceeds tier-by-tier

Vertical Integration of 2D Building Blocks for All‐2D Electronics

Stacking the MoS2/GeSe2 Vertical Van Der Waals Heterostructure for Memory Device

Stacked Lateral Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistors and Their Three-Dimensional Integrated Circuits

First Experimental Demonstration of 3D-Stacked 2T0C DRAM Cells Based on Indium Tin Oxide Channel

Synergistic Engineering of Top Gate Stack for Low Hysteresis 2D MoS2 Transistors

Two-Dimensional Tunneling Memtransistor with Thin-Film Heterostructure for Low-Power Logic-in-Memory Complementary Metal-Oxide Semiconductor

3D Vertical Dual-Layer Oxide Memristive Devices for Neuromorphic Computing

Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

Physical Design of the "2.5D" Stacked System