Mechanism and Experiments of a Novel Dielectric Termination Technology Based on Equal-potential Principle

Wentong Zhang,Jian Zu,Xuhan Zhu,Sen Zhang,Zhili Zhang,Nailong He,Boyong He,Ming Qiao,Zhaoji Li,Bo Zhang

DOI: https://doi.org/10.1109/ispsd46842.2020.9170124

2020-01-01

Abstract:A novel dielectric termination technology (DTT) is proposed and experimentally demonstrated in this paper. The proposed DTT shows a 3-D structure with the fingertip region surrounded by the equal-potential trench dielectric rings. The potential difference $\Delta V$ between every two adjacent rings is clamped as a constant of $\Delta V = V_{\mathbf{B}}/\mathrm{N}$ with $\mathrm{V}_{\mathbf{B}}$ and N being the breakdown voltage and ring number. The electric field lines in the DTT structure are all ended at the adjacent equal-potential rings. So the curvature effect is suppressed and a uniform surface electric field is realized in the DTT structure. Based on the equal-potential principle, the ring interspace can be further reduced to obtain a voltage sustaining length $\mathrm{L}_{\mathbf{T}}$ in the DTT shorter than the drift length $\mathrm{L}_{\mathbf{d}}$, even realize a full-dielectric termination. In the experiments, the $\mathrm{L}_{\mathbf{T}}$ of DTT varies from 38 $\mu$m to 25 $\mu$m with the same $\mathrm{L}_{\mathbf{d}}$ of 35 $\mu$m. The tested $\mathrm{V}_{\mathbf{B}}$ is a constant of 600 V, which realizes a maximum average electric field of 24 V/$\mu$m in the DTT region and a termination factor $\mathrm{k}_{\mathbf{T}} = L_{\mathbf{T}}/\mathrm{L}_{\mathbf{d}}$ of 0.714. The $\mathrm{k}_{\mathbf{T}}$ of DTT is reduced by about 52.4% to 71.4% when compared with the $\mathrm{k}_{\mathbf{T}}$ values of the typical reported conventional JTT structures.