Simulation study of vertical diamond Schottky barrier diode with field plate assisted junction termination extension

Genzhuang Li,Caoyuan Mu,Wang Lin,Dongshuai Li,Xianyi Lv,Qiliang Wang,Liuan Li,Guangtian Zou

DOI: https://doi.org/10.1016/j.mtcomm.2023.105968

IF: 3.8

2023-04-22

Materials Today Communications

Abstract:In this paper, we designed vertical diamond Schottky barrier diodes with a field plate assisted junction termination extension (FP-JTE) structure by using Silvaco TCAD. It demonstrates that the JTE structure is more effective to suppress the electric field crowding around the electrode edges than the FP, but it also increases the on-resistance due to the decreasing conduction area. Then, the FP-JTE diamond SBDs are designed to realize the trade-off between the breakdown voltage and on-resistance. It is found that the JTE length should be shorter than the FP to enhance the current conduction, but it needs to cover the cathode edge to suppress the electric field crowding. We also confirm that the FP-JTE SBDs with the JTE length increase from the sidewall toward the center are recommended to take advantage of both FP and JTE structures.

materials science, multidisciplinary