Abstract:In this paper, the operation mechanism of trench termination is investigated through 2-D numeric simulation on Silvaco. It is found that in trench termination, the electric field is terminated by the accumulated holes at the outer trench sidewall. In order to ensure a high termination breakdown voltage, the trench is refilled with a combination of SiO<sub>2</sub> and polyimide (PI). Through various 2-D numerical simulations, the impact of structural parameters on breakdown voltage has been discussed, namely, trench depth (TD), trench width (TW), and sidewall tilt angle. The 3-D simulations are also conducted to investigate the effect of round corner radius on the device breakdown voltage and electric field in the dielectrics. Based on these results, the trench termination is designed and then fabricated along with a p-i-n diode. The measurement results show that a $14~mu text{m}$ wide trench is sufficient to terminate a voltage of 1750V (>96% of the ideal planar breakdown). Comparing with conventional field limiting rings junction termination extension (FLR/JTE) technology, this trench termination can significantly reduce the termination length by a factor of 4. As a result, the area efficiency is largely improved from 62% to around 90% for a 2A device conducting at 1000 A/cm<sup>2</sup>. These results indicate that the SiC device price can be substantially lowered with such an area-efficient trench termination technology. Furthermore, the 168-h high-temperature reverse bias (HTRB) test under 1200 V and 175 °C shows the potential of this trench termination for long-term reliable operation. Finally, unclamped inductive switching (UIS) tests have been conducted on fabricated devices. Compared to commercial SiC junction barrier Schottky diodes with FLR, fabricated p-i-n diodes with trench termination -how significant higher avalanche capability.

Deep-Trench Termination of Bipolar RF Power Devices

A Novel High-Voltage Trench Gate Insulated Gate Bipolar Transistor With Diffusion Remnant Layer

Techniques for Improving Breakdown Voltages Using Deep Trench

Deep Trench Junction Termination Employing Variable-K Dielectric For High Voltage Devices

Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

Ultra-high voltage device termination using the 3D RESURF (super-junction) concept - experimental demonstration at 6.5 kV

High-k Dielectric Assisted Trench Termination of the 4H-SiC Super Junction Device for Improved Avalanche Capability

Improved Etched Multistep JTE for UHV SiC Power Devices

Trench Field Plate Engineering for High Efficient Edge Termination of 1200 V-class SiC Devices

High Performance Termination of Power Devices with Multi-epi Method

Junction termination structure of transverse high-pressure power semiconductor device

Hybrid Termination with Wide Trench for 4H-Sic Super-Junction Devices

Mechanism and Experiments of a Novel Dielectric Termination Technology Based on Equal-potential Principle

Sidewall-Implanted Trench Termination for 4H-SiC Devices With High Breakdown Voltage and Low Leakage Current

An Improved Composite JTE Termination Technique for Ultrahigh Voltage 4H-Sic Power Devices

Uniform Shallow Trenches Termination Design for High-Voltage VDMOS Transistor

Etched Junction Termination Extension With Floating Guard Rings And Middle Rings For Ultrahigh-Voltage 4h-Sic Pin Diodes

Deep oxide trench termination structure for super-junction MOSFET

3kV 6.7mΩ·cm2 4H-SiC BJT with An Effective Junction Termination Extension (JTE)

3kV 6.7mΩ·cm<sup>2</sup> 4H-SiC BJT with An Effective Junction Termination Extension (JTE)

Study on H K -VDMOS with Deep Trench Termination