Abstract:This work focuses on the epitaxial growth process and kinetics of silicon-based Ir/yttria-stabilized zirconia (YSZ) bilayer films prepared by PLD and magnetron sputtering, including the sequential growth of a YSZ film, an Ir seed layer, and an Ir film on a silicon substrate. The results show that for growing YSZ films by PLD at the target-to-substrate distance of 60 mm, the higher the laser energy density and the oxygen pressure, the lower the laser frequency, the higher the epitaxy quality. In addition, for the preparation of the Ir-seed layer by PLD, background gas decelerates the plasma and suppresses self-sputtering and implantation, which is beneficial to obtaining a high-quality seed layer. In particular, introducing a small amount of oxygen is able to improve the epitaxial quality of the films during the growth of Ir-seed and Ir films, and the mechanism of oxygen is proposed. For the growth of Ir films by magnetron sputtering, the growth rate and the energy of argon ions increased with the increase of RF power, while the epitaxial quality is the opposite. The kinetic theory and simulation results demonstrate that this trend is mainly caused by the increase in the number of particles reaching the substrate without significantly increasing the distribution of high-energy particles. Finally, high-quality Ir (100) films on the YSZ (100) with a fresh surface are prepared. It is shown that increasing the epitaxy quality of the YSZ (100) film and the growth temperature of the Ir film can improve the quality of Ir film. Based on our results, the growth of Ir films on YSZ films with fresh surfaces resulting from in-situ argon plasma cleaning provides a new idea for preparing Ir (100)/YSZ (100) bilayer epitaxial film.

Novel Fabrication of High-Quality Zirconia Ceramic Thin Films by Polyglycol-Assisted Spreading Deposition

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

Formation and Rate Processes of Y2o3 Stabilized Zro2 Thin Films from Zr(Dpm)(4) and Y(Dpm)(3) by Cold-Wall Aerosol-Assisted Mocvd

Formation and Rate Processes of Y[sub 2]o[sub 3] Stabilized ZrO[sub 2] Thin Films from Zr(DPM)[sub 4] and Y(DPM)[sub 3] by Cold-Wall Aerosol-Assisted MOCVD

Synthesis of YSZ film by solid single source PE-MOCVD method and characterization

Structure and properties of zirconia (ZrO<sub>2</sub>) films fabricated by plasma-assisted cathodic arc deposition

Fabrication Of Y2o3-Stablized Zro2 Ultrathin Film By Newly Developed Component-Controllable Langmuir-Blodgett Method

Zro2 and Ysz Thin-Films Synthesized by Microwave Plasma Cvd Process

The deposition of Ir/YSZ double-layer thin films on silicon by PLD and magnetron sputtering: Growth kinetics and the effects of oxygen

Preparation of epitaxial yttria-stabilized zirconia with non-quilibrium t' phase and ferroelastic domain by pulsed laser deposition

Preparation of Yttria stabilized Zirconia (YSZ) film by electrophoretic deposition (EPD) method

Deposition and Characterization of YSZ Thin Films by Aerosol-Assisted CVD

ZrO<sub>2</sub> Thin Films Prepared by Self-Assembled Method

Preparation of Yttria-Stabilized Zirconia(ysz)films by an Electrophoretic Deposition Method

Fabrication and electrical properties of lead zirconate titanate thick films using a new sol-gel processing technique

Epitaxial Growth of Monoclinic and Cubic ZrO2 on Si(100) Without Prior Removal of the Native SiO2

Infrared And Raman Spectroscopic Studies Of Optically Transparent Zirconia (Zro2) Films Deposited By Plasma-Assisted Reactive Pulsed Laser Deposition

Improvement of Surface Morphology of Yttrium-Stabilized Zirconia Films Deposited by Pulsed Laser Deposition on Rolling Assisted Biaxially Textured Substrate Tapes

Fabrication of YSZ Thin Films from Suspension by Electrostatic Spray Deposition

PZT THICK FILMS FABRICATION USING A SOL-GEL BASED 0-3 COMPOSITE PROCESSING