Abstract:Atomic and close-to-atomic scale fabrication with high yield for the color centers in silicon carbide is critical in developing its applications. Combined with Wigner-Seitz method and identify diamond structure method to consider the structure around the silicon vacancy (VSi), it is found that He ion implantation is more likely to fabricate a small number of silicon vacancies with complete structure but locating deep, while Si ion implantation is more likely to introduce more silicon vacancies with incomplete structure but a large number and closer to the near surface. Therefore, a method of dual ion implantation is proposed in this paper. By adjusting the ratio of He to Si ion concentration for dual ion implantation, the fabrication yield of color centers with depth below 5 nm can be increased compared with that of He implantation after high temperature annealing. Molecular dynamics (MD) simulation is employed to discover the underlying mechanism of VSi color center and damage evolution by helium ion and dual ion implantation into four-hexagonal silicon carbide (4H–SiC) with subsequent annealing. Density-functional theory (DFT) calculation proves that magnetic-spin polarization enhances the stability of carbon anti-vacancy pair (CSiVC) defect, which indicates CSiVC defects are more stable than VSi defects. The evolution of the VSi color centers of different defect models are also calculated at various temperatures by MD, and the dynamic process of VSi defects to CSiVC defects is demonstrated. It is revealed that the decrease of the VSi color center at high temperature annealing is partly due to the transformation of some silicon vacancies to CSiVC defects.

Positron annihilation spectroscopy study of vacancy-type defects in He implanted polycrystalline α-SiC

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C

Vacancy Effects on the Formation of He and Kr Cavities in 3C-Sic Irradiated and Annealed at Elevated Temperatures

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Retention And Thermal Release Behavior Of Deuterium And Helium Implanted In Sic

Evolution of secondary defects in arsenic implanted Si

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

Clustering of vacancy defects in high-purity semi-insulating SiC

Thermal behavior of iron in 6H-SiC: Influence of He-induced defects

A Single Nucleotide Substitution at 5′-UTR of GSN1 Represses Its Translation and Leads to an Increase of Grain Length in Rice

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Al-implantation induced damage in 4H-SiC

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$-type 4$H$-SiC

Molecular dynamics simulation of color centers in silicon carbide by helium and dual ion implantation and subsequent annealing

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation