Abstract:Wearable electronics represented by flexible displays and flexible sensors have been attracting enormous attention due to portability, miniaturization and low power consumption. Due to the dramatic increase in the number of display and sensing units, the power consumption and accuracy of the devices are facing great challenges. Active‐matrix thin‐film transistor (TFT) backplanes can effectively reduce signal crosstalk and power consumption of wearable electronics. For TFT devices, the gate insulation layer is one of key factors affecting the device performance such as device mobility, operating voltage, and bias stability, etc. High quality of solution‐processed oxide dielectric films usually are obtained at a high temperature (>400 °C), being a challenge for compatibility with flexible plastic substrates. In this work, low‐temperature annealing processes (the electric oven (EO) and deep ultraviolet (DUV) processing) of high‐k zirconia dielectric films was investigated. Compared to the thermal annealing process, the EO or DUV processing‐annealing process could obtain an approximate dielectric properties with that of thermal annealing process. The EO and DUV processing could effectively promoted the MO framework and the elimination of oxygen defects in the spin‐coating films. DUV processing ZrO 2 film annealed at 150 °C exhibited an excellent properties including a large capacitance of 220 nF/cm 2 and low leakage current of ~10 ‐7 A/cm 2 . These data suggest that combining low‐temperature annealing with EO and DUV irradiation holds great promise for the rapid, low‐temperature production of high‐quality and flexible oxide electronic devices.

Fabrication of Zirconia Dielectric Layer by Spin Coating and Its Application in Thin Film Transistor

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors

Solution-processed yttrium oxide dielectric for high-performance IZO thin-film transistors

Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor

The Fabrication of Thin Film Transistors with ZnO As Active Channel Layer

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Thermal effect of annealing-temperature on solution-processed high- k ZrO2 dielectrics

Structural and Optical Characteristics of Titanium-Doped Zinc Oxide Thin Films and Applications in Thin Film Transistors

Room Temperature Fabrication of High Quality ZrO2Dielectric Films for High Performance Flexible Organic Transistor Applications

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO2 dielectric films

Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric As Gate Insulator

Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

Fabrication And Characteristics Of Zno-Based Thin Film Transistors

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

P‐7.10: Facile low‐temperature solution‐processed ZrO<sub>2</sub> films as high‐k dielectrics for flexible low ‐ power thin‐film transistors

Investigation of Direct Inkjet-Printed Versus Spin-Coated ZrO 2 for Sputter IGZO Thin Film Transistor

Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating

Solution-processed zinc oxide thin films and top-gate thin film transistors