Abstract:Abstract In this study, an Ar/O 2 plasma mixture treatment with different proportions of O 2 was used to reduce the oxygen vacancy density in an amorphous indium gallium zinc oxide (a-IGZO) thin film. The objective was to enhance the field-effect carrier mobility in a thin-film transistor (TFT) with the IGZO film as the channel layer. Atomic force microscopy revealed that the roughness of the IGZO film after plasma treatment was higher than that of the untreated film; however, the surface roughness of the IGZO film decreased after the proportion of O 2 was increased in the plasma. The Hall measurement results showed that the resistivity of the plasma-treated IGZO film increased with a decrease in the electron concentration in the film; in addition, the carrier mobility considerably increased. The IGZO TFT fabricated from this film exhibited a high field-effect carrier mobility of 36 cm 2 V −1 s −1 , a subthreshold swing (SS) of 1.25 V/decade, an I OFF current of 4.58 × 10 −11 A, and an I ON / I OFF current ratio of 7.55 × 10 5 . To further improve the device performance, the plasma-treated IGZO films were subjected to thermal annealing with the annealing temperature ranging from 100 °C to 300 °C. After the annealing process, the plasma-treated IGZO TFTs demonstrated a further improvement in the device performance with a field-effect carrier mobility of 38.8 cm 2 V −1 s −1 , SS of 0.7 V/decade, I OFF current of 1.04 × 10 −11 A, and an I ON / I OFF current ratio of 9.93 × 10 6 . In addition, a reliability test was performed to evaluate the stability of the IGZO TFT devices, which revealed that the threshold voltage maintained a high degree of stability during the long-term tests. Therefore, the plasma-treated IGZO TFTs with subsequent postgrowth annealing could be helpful for the fabrication of next-generation flat-panel displays.

Effect of PVD Process on the Crystallization of IGZO Thin Films

45.2: Effects of RF Sputtering Parameters and Film Composition on C‐Axis Aligned Crystalline (CAAC) IGZO Films

Preparation and Properties of Crystalline IGZO Thin Films

Research Progress on Crystalline IGZO Thin Film Transistor

Effect of Annealing on Wet Etch of Amorphous IGZO Thin Film

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Effects of parameters on the performance of amorphous IGZO thin films prepared by RF magnetron sputtering

The Effect of Crystalline Aluminum Oxide on Device Performance of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Operating at Low Voltage

Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array

Optical and electrical properties of room temperature prepared α-IGZO thin films using an In2Ga2ZnO7 ceramic target

The effect of the crystallization of indium tin oxide on indium tin oxide wet etching based on gate line with the structure of copper/indium tin oxide

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Improvement of Electrical Characteristics and Stability of IGZO TFT Through Surface Single Crystallization of IGZO Film at Room Temperature

Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In2O3-Ga2O3-Zn Thin Films

Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Investigation on Physical Properties of IGZO Thin Films under the Conditions of Mixing Oxygen and Argon

P‐3: High Temperature Annealing Behavior of IGZO Using Plasma Enhanced Atomic Layer Deposition

Critical Effect of Oxygen Pressure in Pulsed Laser Deposition for Room Temperature and High Performance Amorphous In-Ga-Zn-O Thin Film Transistors

Effects of AZO film as inductive layer and annealing temperature on microstructure crystallinity and electrical and optical properties of IGZO/SiO2 and IGZO/AZO/SiO2 specimens

Effect of annealing on characteristics of amorphous InGaZnO thin film transistors fabricated by sol-gel technical