Abstract:Abstract In this study, an Ar/O 2 plasma mixture treatment with different proportions of O 2 was used to reduce the oxygen vacancy density in an amorphous indium gallium zinc oxide (a-IGZO) thin film. The objective was to enhance the field-effect carrier mobility in a thin-film transistor (TFT) with the IGZO film as the channel layer. Atomic force microscopy revealed that the roughness of the IGZO film after plasma treatment was higher than that of the untreated film; however, the surface roughness of the IGZO film decreased after the proportion of O 2 was increased in the plasma. The Hall measurement results showed that the resistivity of the plasma-treated IGZO film increased with a decrease in the electron concentration in the film; in addition, the carrier mobility considerably increased. The IGZO TFT fabricated from this film exhibited a high field-effect carrier mobility of 36 cm 2 V −1 s −1 , a subthreshold swing (SS) of 1.25 V/decade, an I OFF current of 4.58 × 10 −11 A, and an I ON / I OFF current ratio of 7.55 × 10 5 . To further improve the device performance, the plasma-treated IGZO films were subjected to thermal annealing with the annealing temperature ranging from 100 °C to 300 °C. After the annealing process, the plasma-treated IGZO TFTs demonstrated a further improvement in the device performance with a field-effect carrier mobility of 38.8 cm 2 V −1 s −1 , SS of 0.7 V/decade, I OFF current of 1.04 × 10 −11 A, and an I ON / I OFF current ratio of 9.93 × 10 6 . In addition, a reliability test was performed to evaluate the stability of the IGZO TFT devices, which revealed that the threshold voltage maintained a high degree of stability during the long-term tests. Therefore, the plasma-treated IGZO TFTs with subsequent postgrowth annealing could be helpful for the fabrication of next-generation flat-panel displays.

Preparation and Properties of Crystalline IGZO Thin Films

45.2: Effects of RF Sputtering Parameters and Film Composition on C‐Axis Aligned Crystalline (CAAC) IGZO Films

Research Progress on Crystalline IGZO Thin Film Transistor

Effect of PVD Process on the Crystallization of IGZO Thin Films

Improvement of Electrical Characteristics and Stability of IGZO TFT Through Surface Single Crystallization of IGZO Film at Room Temperature

Optical and electrical properties of room temperature prepared α-IGZO thin films using an In2Ga2ZnO7 ceramic target

Investigation on Physical Properties of IGZO Thin Films under the Conditions of Mixing Oxygen and Argon

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Investigation of time-dependent stability and surface defects in sol–gel derived IGZO and IZO thin films

Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

Effect of Annealing on Wet Etch of Amorphous IGZO Thin Film

Performance and Stability of Amorphous Ingazno Thin Film Transistors with A Designed Device Structure

Stability of Low Temperature and Transparent Amorphous Ingazno Thin Film Transistor under Illumination

High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors

Effect of annealing on characteristics of amorphous InGaZnO thin film transistors fabricated by sol-gel technical

Investigation of the Microstructure, Optical and Electrical Properties of In-Ga-Zn Oxide Thin Film Using the Sol-Gel Method

Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Analysis of Wet Etching Characteristics of A-Igzo Thin Film

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature