Abstract:In the present study, annealing at three temperatures (800, 900, and 1000 °C) is applied to indium gallium zinc oxide (IGZO)/SiO2 specimens to investigate the effect of annealing temperature on amorphous IGZO (a-IGZO) crystallization. Then, IGZO/AZO/SiO2 specimens are prepared and annealed at 1000 °C to evaluate the effect of an Al-doped ZnO (AZO) film inserted between IGZO and an a-SiO2 substrate on a-IGZO crystallization to IGZO. The effects of annealing temperature and the AZO film on microstructure crystallization and optical and electrical properties are evaluated. The intensity of the X-ray diffraction peaks of crystalline IGZO increased with increasing annealing temperature. The insertion of the AZO film induced a-IGZO crystallization, which led to comparatively higher peak intensities for the IGZO/AZO/SiO2 specimen annealed at 1000 °C. The use of AZO film changed the In3+ hexagonal structure of the IGZO/SiO2 specimen with unequal bond lengths into the regular hexagonal structure of the IGZO/AZO/SiO2 specimens. Increasing the annealing temperature from 800 to 1000 °C slightly reduced (~0.09%) the transmittance of the IGZO/SiO2 specimens. The microstructure transformation due to AZO addition made the transmittance of the IGZO/AZO/SiO2 specimen annealed at 1000 °C only 1.46% lower than that of the IGZO/SiO2 specimen. A sufficiently high annealing temperature and/or the use of AZO film increases carrier concentration and mobility and decreases resistivity and band gap. AZO film can be used to induce the crystallization of a-IGZO to efficiently improve electrical properties without a significant loss in transmittance.

45.2: Effects of RF Sputtering Parameters and Film Composition on C‐Axis Aligned Crystalline (CAAC) IGZO Films

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous Ingazno Thin Films by Oxygen Partial Pressure

Effects of DC Sputtering Power on the Properties of AZO Films Deposited at Room Temperature for CIGS Photovoltaics

Investigation Of C-Axis-Aligned Crystalline Gadolinium Doped Aluminum-Zinc-Oxide Films Sputtered At Room-Temperature

Preparation and Properties of Crystalline IGZO Thin Films

Effect of PVD Process on the Crystallization of IGZO Thin Films

Deposition Condition Investigation of High c-axis Preferred Orientation ZnO Films Produced by RF Magnetron Sputtering

Influence of Postdeposition Annealing on Crystallinity of Zinc Oxide Films

Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

Effects of deposition power and pressure on the crystallinity of Al-doped ZnO thin films at glass substrates by low temperature RF magnetron sputtering

Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In2O3-Ga2O3-Zn Thin Films

Growth of C-Axis Orientation ZnO Films on Polymer Substrates by Radio-Frequency Magnetron Sputtering

Preparation and sintering of indium–gallium–zinc oxide ceramics with different zinc oxide contents

Effects of AZO film as inductive layer and annealing temperature on microstructure crystallinity and electrical and optical properties of IGZO/SiO2 and IGZO/AZO/SiO2 specimens

Deposition and Characterization of Sputtered ZnO Films

CHARACTERIZING CRYSTALLINE CHROMIUM OXIDE THIN FILM GROWTH PARAMETERS

The Effect of Annealing on the Crystallinity of ZnO Films

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

C-Axis Aligned Crystalline InSnZnO Thin Film Using Mist Chemical Vapor Deposition and Deposition/Annealing Cyclic Method for Thin-Film Transistors Applications

Liquid crystal aligning capabilities on surface-reformed indium-doped zinc oxide films via ion-beam exposure