Investigation Of C-Axis-Aligned Crystalline Gadolinium Doped Aluminum-Zinc-Oxide Films Sputtered At Room-Temperature

Junchen Dong,Huijin Li,Dedong Han,Wen Yu,Zhen Luo,Yi Liang,Shengdong Zhang,Xing Zhang,Yi Wang
DOI: https://doi.org/10.1063/1.5011226
IF: 4
2018-01-01
Applied Physics Letters
Abstract:The c-axis-aligned crystalline (CAAC) rare earth gadolinium doped aluminum-zinc-oxide (Gd-AZO) thin films sputtered at room temperature are investigated in this work. It is found that the polycrystalline AZO is restructured into CAAC Gd-AZO through gadolinium doping. The X-ray diffraction spectrum and high-resolution transmission electron microscopy images indicate the (002) crystalline orientation of the local Gd-AZO grains. The film-formation mechanism of room-temperature sputtered CAAC Gd-AZO thin films is analyzed. Bottom gate oxide thin film transistors with a Gd-AZO active layer are fabricated by low temperature processes. The devices show preferable electrical properties, such as good I-V characteristics, high uniformity, and excellent bias stress stability. Published by AIP Publishing.
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