Abstract:Fully transparent indium gallium zinc oxide thin film transistors (IGZO TFTs) on glass substrate were fabricated by radio frequency magnetron sputtering at room temperature. The influence of oxygen plasma treatment technology on the characteristics of IGZO TFTs were analyzed. Before growing the source/drain electrodes, different power of oxygen plasma were used to treat the surface of the source/drain region. The experiment results suggest that the plasma treatment can improve the performance of device. Compared with the control group, the TFTs with O2 plasma treatment for 10 seconds and power of 150W show a better performance. The Ion/Ioff ratio was increased by an order of magnitude from 2.67×10 4 to 2.1×105, and the saturation mobility (μsat) was doubled from 0.54 cm 2 V -1 s -1 to 1.1cm 2 V -1 s -1 . The sub-threshold swing (SS) is 0.42V/dec, and Ion/Ioff ratio is 2.1×10 5 .

Analysis of Wet Etching Characteristics of A-Igzo Thin Film

Effect of Annealing on Wet Etch of Amorphous IGZO Thin Film

Amorphous InGaZnO Thin Film Transistors with Wet-Etched Ag Electrodes

Process development of inverted‐staggered amorphous InGaZnO thin‐film transistors with wet‐etched electrodes

Effect of Etching Stop Layer on Characteristics of Amorphous Igzo Thin Film Transistor Fabricated at Low Temperature

Preparation and Properties of Crystalline IGZO Thin Films

Self-Assembled Transparent A-Igzo Based Tfts for Flexible Sensing Applications

Fabrication And Characterization Of A-Igzo Thin Film Transistors On Smooth Printed Polyimide

Effects of Over-Etching Time on the Characteristics of Amorphous IGZO Thin-Film Transistors with Back-Channel-etch Structure

The Fabrication of Indium–Gallium–Zinc Oxide Sputtering Targets with Various Gallium Contents and Their Applications to Top-Gate Thin-Film Transistors

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Sputtered oxides used for passivation layers of amorphous InGaZnO thin film transistors

A-Igzo TFTs with Inductively Coupled Plasma Chemical Vapor Deposited ${\rm SiO}_{x}$ Gate Dielectric

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Fabrication of Flexible Amorphous InGaZnO Thin Film Transistors with SiOx/TaOx Gate Insulators

Highly Transparent IGZO-TFTs Uses IGZO Source and Drain Electrodes with a Composite Insulation Layer Structure

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Amorphous InGaZnO Thin Film Transistors with Sputtered Silver Source/drain and Gate Electrodes

Improvements in passivation effect of amorphous InGaZnO thin film transistors

Enlightenment of Deionized‐Water Bathing IGZO TFTs

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.