Abstract:Al2O3, as one of the gate dielectric materials for thin film transistors (TFTs), has been extensively investigated because of its large bandgap, high breakdown field, and good thermal stability. However, the further development of Al2O3 thin films is limited by the presence of defects such as oxygen vacancies, self-interstitial atoms, or impurity elements. To overcome this obstacle, we have developed a novel method for fabricating Al2O3 thin films by using the atomic layer deposition (ALD) technique. This method replaces the conventional Trimethylaluminium (TMA)/H2O cycles with TMA/TMA/H2O/H2O cycles (referred to as 'double cycles'), to deposit the Al2O3. The 5-nm ultrathin Al2O3 film showed a high areal capacitance of 660 nF/cm2 at 20 Hz, and a relatively low current density of 10−8 A/cm2 at 1 MV/cm. InGaZnO (IGZO) TFTs with ultrathin Al2O3 gate dielectric grown by double cycles exhibited outstanding performances, such as a near theoretical limit subthreshold swing (SS) of 70 mV/decade, a higher on/off current ratio ) of 106, an increased field-effect mobility ( ) of 6.5 cm2/Vs, a lower threshold voltage of 0.2 V, and a low operating voltage of 3 V. These results are superior to the IGZO TFTs with Al2O3 dielectrics deposited using the single TMA/H2O cycle. Therefore, the implementation of 'double cycles' in the fabrication of dielectrics through ALD demonstrates considerable potential for future application in low-power electronic devices.

Fabrication of Flexible Amorphous InGaZnO Thin Film Transistors with SiOx/TaOx Gate Insulators

Double-stacked gate insulators SiOx/TaOx for flexible amorphous InGaZnO thin film transistors

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

TiSiOx Gate Dielectrics Produced by Reactive Sputtering for High Performance InGaZnO Thin Film Transistors

Ultra-thin gate insulator of atomic-layer-deposited AlO x and HfO x for amorphous InGaZnO thin-film transistors

Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

Effect of Etching Stop Layer on Characteristics of Amorphous Igzo Thin Film Transistor Fabricated at Low Temperature

A-Igzo TFTs with Inductively Coupled Plasma Chemical Vapor Deposited ${\rm SiO}_{x}$ Gate Dielectric

Amorphous InGaZnO Thin Film Transistors with Wet-Etched Ag Electrodes

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO2 Interfacial Layer on PECVD SiO2 Gate Insulator

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs

Sputtering-Deposited Hafnium Oxide Dielectric for High-Performance InGaZnO Thin Film Transistors

Amorphous InGaZnO Thin Film Transistors with Sputtered Silver Source/drain and Gate Electrodes

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes

Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator

Sputtered oxides used for passivation layers of amorphous InGaZnO thin film transistors