ENVIRONMENTAL SENSING HUB ON SINGLE CHIP USING DOUBLE-SIDE POST-CMOS PROCESSES

Cheng-Chun Chang,Ping-Hsiu Hong,Sheng-Kai Yeh,Yung-Chian Lin,Mei-Feng Lai,Weileun Fang
DOI: https://doi.org/10.1109/mems46641.2020.9056143
2020-01-01
Abstract:This research reports a monolithically integrated Humidity/Thermometer/Pressure sensor to realize an environment sensing hub. The environment sensing hub is designed and implemented using the TSMC 0.18 mu m 1P6M CMOS platform and the follow-up double-side post-CMOS micromachining processes. Features of this study are: (1) Small footprint with less packaging effort: monolithic integration of H/T/P sensors on a single chip, (2) Fast response time of relative-humidity (RH) sensor: removal of backside silicon by double-side post-CMOS process to enhance vapor diffusion of capacitive RH sensor. (3) Double-side post-CMOS process: simultaneously fabricating backside cavities for H/P sensors. Measurement results indicate the performances of the environment sensing hub: humidity sensor with sensitivity of 4.06fF/%RH and response time of 3.1sec (15.7sec for the reference type of conventional design), and pressure sensor with sensitivity of 0.79fF/kPa, thermometer with response of 15.8mV/degrees C.
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