A 0.26-Pj·k2 2400-Μm2 Digital Temperature Sensor in 55-Nm CMOS

Zhong Tang,Zhenyan Huang,Xiao-Peng Yu,Zheng Shi,Nick Nianxiong Tan
DOI: https://doi.org/10.1109/lssc.2021.3072989
2021-01-01
IEEE Solid-State Circuits Letters
Abstract:This letter presents a compact and energy-efficient digital CMOS temperature sensor. A leakage-dominated ring oscillator (LDRO) with exponential temperature dependence and tunable supply sensitivity is proposed. A Schmitt-trigger with feedback power gating is used to minimize short-circuit currents in the delay cell. An adaptive frequency-to-digital converter is proposed in this work to improve flexibility and efficiency. It remains accurate while the reference clock can be higher or lower than the sensed frequency. Fabricated in a standard digital 55-nm CMOS process, this sensor has an active area of 2400 mu m(2) and achieves a resolution figure of merit (FoM) of 0.26 pJ.K-2. It has a measured inaccuracy of +/- 0.8 degrees C (3 sigma) from -40 degrees C to 85 degrees C after a 1-point correlated calibration.
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