Abstract:A self-referenced temperature sensor with a time-domain readout and a two-step improvement on output dynamic range is presented in this paper. The proposed temperature sensor utilizes BJTs to generate temperature dependent/independent currents, which are converted to digital bits using a ring-oscillator-based time-domain readout scheme. A novel two-step improvement on output dynamic range is proposed to improve the power-efficiency and simplify the hardware design with a high conversion rate. Furthermore, the adopted process compensation strategy and the self-referenced readout scheme make the whole temperature sensor robust to process and supply variations. Fabricated in a standard 0.13-mu m CMOS process, the proposed temperature sensor occupies a die area of 0.06 mm(2) and consumes 9.92 nJ per conversion at a conversion rate of 75 kSa/s. After one-point calibration at 20 degrees C, the sensor achieves inaccuracies of -2.88 degrees C/+2.71 degrees C and -1.7 degrees C/1.36 degrees C from -20 degrees C to 100 degrees C, with and without systematic nonlinearity removal, respectively. It shows an average supply sensitivity of 0.0136 degrees C/mV from 1.05 V to 1.4 V without any external reference clock or voltage regulators.

A 3216 μm2 MOS-Based Temperature Sensor with a Wide Temperature Measurement Range and Linear Readout

An All-Digital CMOS Temperature Sensor with a Wide Supply Voltage Range.

A 1.2V Self-Referenced Temperature Sensor with a Time-Domain Readout and a Two-Step Improvement on Output Dynamic Range

A CMOS Temperature Sensor with Versatile Readout Scheme and High Accuracy for Multi-Sensor Systems

A 0.26-Pj·k2 2400-Μm2 Digital Temperature Sensor in 55-Nm CMOS

An Inaccuracy of +/- 0.5 degrees C Digital Temperature Sensor From-40 degrees C to 125 degrees C With Curvature Correction

A BJT-based SAR Temperature Sensor with a 5.12 pJ.K-2 Resolution FoM from-40 degrees C to 125 degrees C

A BJT-based SAR Temperature Sensor with a $5.12\ \text{pJ}\cdot \mathrm{K}^{2}$ Resolution FoM from -40 °C to 125 °C.

A BJT-based SAR Temperature Sensor with a $5.12\ \text{pj}\cdot \mathrm{k}^{2}$ Resolution FoM from −40 °C to 125 °C

A 0.8V Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.4°C ($\mathbf{3}\mathbf{\sigma}$) from −40°C to 125°C in 22nm CMOS

An Energy-Efficient BJT-Based Temperature Sensor with +/- 0.8 degrees C (3 sigma) Inaccuracy from-50 to 150 degrees C

A 1-V Diode-Based Temperature Sensor with a Resolution FoM of 3.1pj•k2 in 55nm CMOS

An Untrimmed BJT-Based Temperature Sensor with Dynamic Current-Gain Compensation in 55-Nm CMOS Process

An Energy-Efficient Capacitively Biased Diode-Based Temperature Sensor in 55-nm CMOS

A Dynamic-Biased Resistor-Based CMOS Temperature Sensor with a Duty-Cycle-Modulated Output

A 1770- $\mu$ M 2 Leakage-Based Digital Temperature Sensor with Supply Sensitivity Suppression in 55-Nm CMOS

A 840-Μm2 Low-Power All-Mos Temperature Sensor Front-End with Real-Time Voltage Calibration

A 840- μm 2 low-power all-MOS temperature sensor front-end with real-time voltage calibration

A 840μm2 557nw All-Mos Temperature Sensor Front-End for SoC Thermal Monitoring

A Novel Low Power Wide Supply Voltage Range Cmos Temperature Sensor With-0.2/0.5 Degrees C Error From-20 Degrees C To 60 Degrees C

A novel low power wide supply voltage range CMOS temperature sensor with 0.2/0.5°C error from -20°C to 60°C