Abstract:The integration of on-chip temperature sensors within various systems, industrial Internet of Things (IoT), and wireless sensor networks is greatly facilitated by their small size, cost-effectiveness, and capability to provide direct digital output. However, the diverse application scenarios pose challenges in designing these sensors. On one hand, real-time clock calibration demands high-precision temperature sensors, while on-chip heat management emphasizes compactness and low-voltage operation. Additionally, streamlining the calibration cost for mass production holds significant practical value. Addressing these challenges, this study systematically investigates on-chip complementary metal-oxide-semiconductor (CMOS) temperature sensors based on distinct signal domains processed by temperature readout circuits. Specifically, the research commences by analyzing the issues of several degeneracy points in the front-end circuit of a bipolar junction transistor (BJT) temperature sensor with current gain compensation technology. To address the intricate design challenges in advanced technologies and calibration complexities in industrial applications, dynamic component matching, current gain compensation, and chopper stabilization are harnessed. A novel dynamic current gain canceling technique for temperature readout is introduced, enhancing temperature measurement accuracy without incurring additional power consumption or area overhead. Ultimately, an all-digital CMOS temperature sensor is realized using the SMIC 55 nm CMOS process. Occupying a mere 0.29 mm2 of core area, the design operates efficiently across a wide supply voltage range of 1.2 V to 3.6 V. Covering a temperature spectrum from −40 °C to 125 °C, the sensor demonstrates a calibration error of just ±0.7 °C. This achievement is attributed to the incorporation of the proposed dynamic current gain compensation technique.

An Untrimmed BJT-Based Temperature Sensor with Dynamic Current-Gain Compensation in 55-Nm CMOS Process

A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from −40 °C to 125 °C

A 0.8V Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.4°C ($\mathbf{3}\mathbf{\sigma}$) from −40°C to 125°C in 22nm CMOS

An Energy-Efficient BJT-Based Temperature Sensor with +/- 0.8 degrees C (3 sigma) Inaccuracy from-50 to 150 degrees C

Capacitor-Reused Cmos Temperature Sensor With Duty-Cycle-Modulated Output And 0.38 Degrees C (3 Sigma) Inaccuracy

An All-Digital CMOS Temperature Sensor with a Wide Supply Voltage Range.

A Dynamic-Biased Resistor-Based CMOS Temperature Sensor with a Duty-Cycle-Modulated Output

A BJT-based SAR Temperature Sensor with a 5.12 pJ.K-2 Resolution FoM from-40 degrees C to 125 degrees C

Capacitor‐reused CMOS Temperature Sensor with Duty‐cycle‐modulated Output and 0.38°C () Inaccuracy

An Inaccuracy of +/- 0.5 degrees C Digital Temperature Sensor From-40 degrees C to 125 degrees C With Curvature Correction

A 1.2V Self-Referenced Temperature Sensor with a Time-Domain Readout and a Two-Step Improvement on Output Dynamic Range

Capacitor-reused CMOS temperature sensor with duty-cycle-modulated output and 0.38°C ( 3 σ ) inaccuracy

A CMOS Temperature Sensor with Versatile Readout Scheme and High Accuracy for Multi-Sensor Systems

A BJT-based SAR Temperature Sensor with a $5.12\ \text{pJ}\cdot \mathrm{K}^{2}$ Resolution FoM from -40 °C to 125 °C.

A BJT-based SAR Temperature Sensor with a $5.12\ \text{pj}\cdot \mathrm{k}^{2}$ Resolution FoM from −40 °C to 125 °C

A 1-V Diode-Based Temperature Sensor with a Resolution FoM of 3.1pj•k2 in 55nm CMOS

A BJT-Based Fully Integrated 16-Bit ZOOM Temperature Sensor with an Inaccuracy of 0.28°C (3σ) from -40°C to 125°C Using Improved 1-Point Calibration

An Energy-Efficient Capacitively Biased Diode-Based Temperature Sensor in 55-nm CMOS

A 0.26-Pj·k2 2400-Μm2 Digital Temperature Sensor in 55-Nm CMOS

CMOS Digital Temperature Sensor with Self-Correcting Technique

Design of High Precision Temperature Sensor with Current Gain Compensation Technology for On-Chip Application