Monolithic Integration of Pressure/Humidity/Temperature Sensors for CMOS-Mems Environmental Sensing Hub with Structure Designs for Performances Enhancement

Yung-Chian Lin,Ping-Hsiu Hong,Sheng-Kai Yeh,Cheng-Chun Chang,Weileun Fang
DOI: https://doi.org/10.1109/MEMS46641.2020.9056401
2020-01-01
Abstract:This study presents a monolithic integration of pressure, humidity and temperature sensing units to achieve an environmental sensing hub (Fig. 1). The proposed environmental sensing hub is realized using the TSMC 0.18μm 1P6M CMOS platform, and follow-up in-house post-CMOS processes. The presented environmental sensing hub has three merits: (1) single-side microfabrication processes: for monolithic integration of pressure, humidity, and temperature sensors, (2) vertical integration design: for the temperature sensor and the high sensitive pressure sensor with corrugated diaphragm, and (3) novel capacitive humidity sensor design: pillar sensing electrodes array and surrounded polyimide filler for response time enhancement. Measurements show performances of proposed environmental sensing hub are: sensitivity of pressure sensor with corrugated structure is 0.969fF/kPa (0.197fF/kPa for reference type w/o corrugated structure), humidity sensor with sensitivity of 2.897fF/%RH and response time of 12.1 seconds, and resistance temperature detector with sensitivity of 0.26%/°C.
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