VERTICAL INTEGRATION OF PRESSURE/HUMIDITY/TEMPERATURE SENSORS FOR CMOS-MEMS ENVIRONMENTAL SENSING HUB

Yung-Chian Lin,Ya-Chu Lee,Chia-Hung Yang,Weileun Fang
DOI: https://doi.org/10.1109/sensors47087.2021.9639781
2021-01-01
Abstract:This study presents the environmental sensing hub with vertical integration of humidity, pressure, and temperature sensors on a single chip (Fig.1). The presented device is fabricated through TSMC 0.18 mu m 1P6M CMOS platform, and in-house post-CMOS processes. The proposed environmental sensing hub has following features: (1) monolithic integration of humidity (H), pressure (P), and temperature (T) sensors to form the sensing hub, (2) vertical integration of H/P/T sensors to reduce the footprint of chip (as compare with the existing side by side designs). Measurement results of presented environmental sensing hub are: humidity sensor with sensitivity of 2.025fF/% RH, pressure sensor with sensitivity of 0.38fF/kPa, and diode temperature detector with sensitivity of 1.6mV/degrees C.
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