Vertically Integrated Cmos-Mems Capacitive Humidity Sensor And A Resistive Temperature Detector For Environment Application

Sih-Chieh Chen,Vincent P.J. Chung,Da-Jeng Yao,Weileun Fang
DOI: https://doi.org/10.1109/TRANSDUCERS.2017.7994333
2017-01-01
Abstract:This study demonstrates the vertically integrated environment sensor with a capacitive relative humidity sensor (RH-sensor) and a resistive temperature detector (RTD) using the TSMC 0.18 mu m 1P6M CMOS process. Features of this study are: (1) multiple sensing units could be vertically implemented and integrated in one chip; (2) fast response humidity sensor is realized based on fence-shaped capacitor (supported by oxide pillars) with polyimide (PI) filler; (3) simple post-CMOS processes include metal wet etching and pneumatic dispensing of PI. Measurement results indicate the RH sensor with sensitivity of 0.051%/% RH and response time of 16s; and temperature coefficient of resistance (TCR) of RTD is 0.28%/degrees C.
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