Abstract:Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the epitaxial growth of these heterostructures at a thickness of a few micrometers has been a challenging task due to the lattice mismatch and its associated instabilities resulting from the formation of growth defects. To elucidate these limits, we outline herein a process for the strain-balanced growth on silicon of 11.1/21.5 nm Ge/Si 0.18 Ge 0.82 superlattices (SLs) with a total thickness of 16 μ m corresponding to 500 periods. Composition, thickness, and interface width are preserved across the entire SL heterostructure, which is an indication of limited Si–Ge intermixing. High crystallinity and low defect density are obtained in the Ge/Si 0.18 Ge 0.82 layers; however, the dislocation pileup at the interface with the growth substrate induces micrometer-long cracks on the surface. This eventually leads to significant layer tilt in the strain-balanced SL and in the formation of millimeter-long, free-standing flakes. These results confirm the local uniformity of structural properties and highlight the critical importance of threading dislocations in shaping the wafer-level stability of thick multi-quantum well heterostructures required to implement effective silicon-compatible Ge/SiGe photonic devices.

Growth and In-Plane Undulations of GaAs/Ge Superlattices on [001]-Oriented Ge and GaAs Substrates: Formation of Regular 3D Island-in-network Nanostructures

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Study of Si and Ge growth on Si(100) surface

Structural Evolution of GeMn/Ge Superlattices Grown by Molecular Beam Epitaxy under Different Growth Conditions

Superlattice Growth Via MBE and Green’s Function Techniques

GEOMETRICAL CONFIGURATIONS OF (si)n/(ge)n SUPERLATTICES

Lattice-Dynamics Of Strained Si/Ge Superlattices

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Investigation on the Quantum-Well Structure of A Gaas/Al0.3ga0.7as Superlattice Grown on A Misoriented Substrate

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

Metal Organic Chemical Vapor Deposition Growth and Characterization of Inas/Gasb Type-Ii Superlattices on Gaas (001) Substrates

Investigation of Defect Formation in InGaAs on GaP/Si (100) Substrates

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

Study on GSMBE growth of InGaAs/InP superlattice materials

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Growth Of Atomically Flat Nanofilms And Surface Superstructures Of Intrinsic Liquid Alloys

Controllable growth of GeSi nanostructures by molecular beam epitaxy