Abstract:Amorphous silicon (a-Si) and microcrystalline silicon (µc-Si) films were deposited in atmospheric-pressure (AP) He/H2/SiH4 plasma excited by a 150 MHz very high-frequency (VHF) power at a temperature of 220 °C. The variations of thickness and film crystallinity in the gas flow direction were studied using two electrodes (length = 16 and 5 mm). The electrical properties of the deposited Si layers were evaluated by fabricating bottom-gate thin film transistors (TFTs). The results showed that the chemical reactions both in gas phase and on the growing film surface were significantly enhanced in AP-VHF plasma, promoting phase transition from amorphous to microcrystalline on a time scale of the order of less than 0.1 ms. The performance of bottom-gate TFTs showed that a-Si layers formed in the upstream portion of the plasma zone had good enough electrical property (field-effect mobility of 1–1.5 cm2 V−1 s−1) despite very high deposition rates (several tens of nm s−1). Meanwhile, µc-Si layers deposited in the downstream portion of the plasma zone did not acquire their original superiority over a-Si films with reference to electrical properties, although the use of the shorter electrode greatly improved the layer quality. The precise control of gas residence time is primarily important for the deposition of µc-Si films with desired qualities through sufficiently passivating grain boundaries with a-Si tissues.

A comparative study on the direct deposition of μc-Si:H and plasma-induced recrystallization of a-Si:H: Insight into Si crystallization in a high-density plasma

A New Method Used to Control the Structure of High Rate Microcrystalline Silicon Thin Films

Study on Al-induced Crystallization of Al/a-Si:H Bilayer Thin Film

Substrate-thickness dependence of hydrogenated microcrystalline silicon nucleation rate on amorphous silicon layer

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H

The Effect Of Thermal Annealing On Crystallization In A-Si : H/Sio2 Multilayers By Using Layer By Layer Plasma Oxidation

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma

Study on Crystallization Mechanism of Hydrogenated Silicon Film

Gisaxs And Atr-Ftir Studies On Stress-Induced Microstructure Evolution Of A-Si:H Under H-2 Plasma Exposure

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

High Rate Deposition Of Nanocrystalline Silicon By Thermal Plasma Enhanced Cvd

Transport Properties of Μc-Si:H Films Prepared by Very High Hydrogen-Diluted Silane Plasma

Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Transport properties of µc-Si:H films prepared by very high hydrogen-diluted silane plasma

Influence of Ultrathin Amorphous Silicon Layers on the Nucleation of Microcrystalline Silicon Films under Hydrogen Plasma Treatment

Transition Between Amorphous and Crystalline Phases of SiC Deposited on Si Substrate Using H3SiCH3

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Study on the Growth Mechanism and Microstructure of High Rate Growth Μc-Si:H Thin Films

Numerical Study of Si Nanoparticle Formation by SiCl4hydrogenation in RF Plasma