Abstract:Compared to conventional through-silicon-via (TSV) technology, coaxial TSVs can provide better radio frequency (RF) transmission performance in terms of reduced transmission loss and enhanced impedance matching in 2.5-D/3-D heterogeneous integration of RF microsystems. This article presents a novel fabrication scheme for coaxial TSVs comprised of Cu-pillar inner conductors, annular benzocyclobutene (BCB) insulators, and annular Cu outer conductors. Complete Cu conductors are achieved by the proposed double-sided etching and electroplating method, in which the outer and inner conductors are fabricated from the front and back sides of the wafer, respectively. Besides, a thick BCB insulator without voids is realized based on the vacuum-assisted spin-filling technique. Due to the good feasibility of the fabrication processes, the dimensions of the coaxial TSV can be flexibly designed to meet the requirements for impedance matching. Coaxial TSVs with a height of 85 mu m, an inner conductor diameter of 45 mu m, and an insulator thickness of 53 mu m are successfully fabricated. Measurement results show that the TSVs exhibit a low leakage current between the inner and outer conductors of 1.28 pA at 20 V, and the return loss and insertion loss are better than - 16 and - 0.35 dB up to 40 GHz, respectively. Such compact and low-loss coaxial TSV structure together with its fabrication scheme facilitates the miniaturized, high-density, and high-performance 2.5-D/3-D heterogeneous integration of microsystems at RF and millimeter-wave (MMW) frequencies.

Electrical Characterization of Coaxial Silicon–Insulator–Silicon Through-Silicon Vias: Theoretical Analysis and Experiments

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrical Characterization of Through-Silicon-via-Based Coaxial Line for High-Frequency 3D Integration (invited Paper)

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Coaxial Through-Silicon-Vias Using Low-κ SiO2 Insulator

Modeling and Characterization of Coaxial Through-Silicon Via with Electrically Floating Inner Silicon

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

A Novel Double-Sided Etching and Electroplating Fabrication Scheme for Coaxial Through-Silicon-Vias in 3-D Integration

On the Efficacy of Through-Silicon-Via Inductors

Wideband impedance model for coaxial through-silicon vias in 3-D integration

New Coaxial Through Silicon Via (TSV) Applied for Three Dimensional Integrated Circuits (3D ICs)

Thermo-mechanical Performance of Cu and SiO2 Filled Coaxial Through-Silicon-via (TSV)

Analysis of Multiple Vias Coupling in Silicon Interposer by Using Cylindrical Mode Expansion Method

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Electrical Characterization of RF TSV for 3D Multi-Core and Heterogeneous ICs

Electrical modeling and analysis of polymer-cavity through-silicon vias

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer