Bipolar Resistive Switching Behaviour in $$\mathrm{mn}_{0.03}\mathrm{zn}_{0.97}{\hbox {o/amorphous}}$$ Mn 0.03 Zn 0.97 O/amorphous $$\mathrm{la}_{0.7}\mathrm{zn}_{0.3}\mathrm{mno}_{3}$$ La 0.7 Zn 0.3 MnO 3 Heterostructure Films

Hua Wang,Qisong Chen,Jiwen Xu,Xiaowen Zhang,Shuaishuai Yan

DOI: https://doi.org/10.1007/s12034-017-1451-8

IF: 1.878

2017-01-01

Bulletin of Materials Science

Abstract:\(\hbox {Mn}_{0.03}\hbox {Zn}_{0.97}\hbox {O}\) (MZO)/amorphous \(\hbox {La}_{0.7}\hbox {Zn}_{0.3}\hbox {MnO}_{3}\) (LZMO) heterostructures were deposited on \(\hbox {p}^{+}\hbox {-Si}\) substrates through sol–gel spin coating. \(\hbox {Ag/MZO/LZMO/p}^{+}\hbox {-Si}\) and \(\hbox {Ag/LZMO/MZO/p}^{+}\hbox {-Si}\) devices exhibit a bipolar, reversible and remarkable resistive switching behaviour at room temperature. The ratio of the resistance at high-resistance state (HRS) to that at low-resistance state (LRS) (\(R_{\mathrm{HRS}}/R_{\mathrm{LRS}}\)) in the \(\hbox {Ag/LZMO/MZO/p}^{+}\hbox {-Si}\) device is approximately five orders of magnitude, and is maintained after over \(10^{3}\) successive switching cycles or over a period of \(2\times 10^{6}\hbox { s}\), indicating good endurance property and retention characteristics. Conversely, the ratio in the \(\hbox {Ag/MZO/LZMO/p}^{+}\hbox {-Si}\) device began to decrease after 100 successive switching cycles. The LZMO/MZO interface could play an important role in the resistive switching behaviour of the devices. The dominant conduction mechanism of the two devices is charge-trap emission.