Abstract:Mn0.03Zn0.97O\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Mn}_{0.03}\hbox {Zn}_{0.97}\hbox {O}$$\end{document} (MZO)/amorphous La0.7Zn0.3MnO3\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {La}_{0.7}\hbox {Zn}_{0.3}\hbox {MnO}_{3}$$\end{document} (LZMO) heterostructures were deposited on p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {p}^{+}\hbox {-Si}$$\end{document} substrates through sol–gel spin coating. Ag/MZO/LZMO/p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Ag/MZO/LZMO/p}^{+}\hbox {-Si}$$\end{document} and Ag/LZMO/MZO/p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Ag/LZMO/MZO/p}^{+}\hbox {-Si}$$\end{document} devices exhibit a bipolar, reversible and remarkable resistive switching behaviour at room temperature. The ratio of the resistance at high-resistance state (HRS) to that at low-resistance state (LRS) (RHRS/RLRS\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$R_{\mathrm{HRS}}/R_{\mathrm{LRS}}$$\end{document}) in the Ag/LZMO/MZO/p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Ag/LZMO/MZO/p}^{+}\hbox {-Si}$$\end{document} device is approximately five orders of magnitude, and is maintained after over 103\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$10^{3}$$\end{document} successive switching cycles or over a period of 2×106s\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$2\times 10^{6}\hbox { s}$$\end{document}, indicating good endurance property and retention characteristics. Conversely, the ratio in the Ag/MZO/LZMO/p+-Si\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Ag/MZO/LZMO/p}^{+}\hbox {-Si}$$\end{document} device began to decrease after 100 successive switching cycles. The LZMO/MZO interface could play an important role in the resistive switching behaviour of the devices. The dominant conduction mechanism of the two devices is charge-trap emission.

Effects of Zn doping concentration on resistive switching characteristics in Ag /La 1− x Zn x MnO _3/p^+ -Si devices

Effects of Zn Doping Concentration on Resistive Switching Characteristics in Ag /la1−x Zn X MnO 3 / P + $_{3}/\textit {p}^{\mathrm {+}}$ -Si Devices

Effect of Zn Doping on Transport Properties of La2/3 Sr1/3 Mn1 - X Znx O3 Films

Bipolar resistive switching behaviour in Mn0.03Zn0.97O/amorphous\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\mathr

Bipolar Resistive Switching Behaviour in $$\mathrm{mn}_{0.03}\mathrm{zn}_{0.97}{\hbox {o/amorphous}}$$ Mn 0.03 Zn 0.97 O/amorphous $$\mathrm{la}_{0.7}\mathrm{zn}_{0.3}\mathrm{mno}_{3}$$ La 0.7 Zn 0.3 MnO 3 Heterostructure Films

Study on the Resistance Switching Properties of Ag/La0.67Ca0.33MnO3/P+-Si Sandwich Devices

Rectifying resistance-switching behaviour of Ag/SBTO/STMO/p+\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {p}^

Low Temperature Synthesis of Amorphous La 0.7 Zn 0.3 MnO 3 Films Grown on P + -Si Substrates and Its Resistive Switching Properties

Effects of Bismuth Doping Concentration on Microstructure and Resistance Switching Behavior of SrTiO3 Films

Effect of Sol Concentration on the Characteristics of Resistive Switching Ag/Mg0.2Zn0.8O/ITO Heterostructures

Magnetroresistance and Current-voltage Characteristics in La2/3Sr1/3MnO3/ZnO Composite Films

Resistance Switching Behaviour and Properties of Ag/La0.5Mg0.5MnO3/p+-Si with Different Thicknesses of Resistance Films Fabricated Through Sol—Gel Method

Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Ag/ZnMn2O4/p+-Si Device

Fabrication and Properties of Ag/Mg0.2Zn0.80/La0.67Ca0.33MnO/p+-Si Resistive Switching Heterostructure Devices

Electrode Dependence Of Resistive Switching In Mn-Doped Zno: Filamentary Versus Interfacial Mechanisms

Effects of Mg-doping on resistance switching property of MgxZn1-xO thin films prepared by sol-gel method

Effects of Mg-Doping on Resistance Switching Property of Mg<sub>x</sub>Zn<sub>1-x</sub>O Thin Films Prepared by Sol-Gel Method

Effects of pre-heating temperature on microstructures and resistive switching properties of Mn-doped ZnO films prepared at low temperature

Bipolar resistive switching characteristics of PbZrO3/LaNiO3 heterostructure thin films prepared by a sol–gel process

Resistive Switching Behavior of Ag/Mg 0.2 Zn 0.8 O/ZnMn 2 O 4 /p + -Si Heterostructure Devices for Nonvolatile Memory Applications