Effects of Mg-Doping on Resistance Switching Property of Mg<sub>x</sub>Zn<sub>1-x</sub>O Thin Films Prepared by Sol-Gel Method

Hua Wang,Shu Ming Gao,Ji Wen Xu,Ling Yang,Wei Qiu
DOI: https://doi.org/10.4028/www.scientific.net/amr.750-752.1034
2013-01-01
Advanced Materials Research
Abstract:The films of MgxZn1-xO were prepared on ITO-coated glass substrates by sol-gel method at low temperature. The influence of Mg contentxon microstructure and resistive switching behavior in MgxZn1-xO films was systematically investigated. It was found that all MgxZn1-xO samples exhibit a polycrystalline character with a single phase hexagonal wurtzite structure, irrespective of the Mg contentx. With the increase of Mg contentx, theVset,Vreset,RLRSandRHRS/RLRSof MgxZn1-xO films increased, but the endure of MgxZn1-xO films switching cycles decreased as the Mg contentxis over 0.2 and exhibited a smaller degradation of resistance as the Mg contentxis 0.1. The resistance switching mechanism was discussed.
What problem does this paper attempt to address?