Effect of Mg Doping on Dielectric Properties of Sol-Gel Derived (pb 0.7 Sr 0.3 )mg X Ti 1– X O 3– X Thin Film

X. T. Li,W. L. Huo,W. J. Weng,G. R. Han,P. Y. Du
DOI: https://doi.org/10.1007/s10832-007-9088-4
2008-01-01
Journal of Electroceramics
Abstract:(Pb0.7Sr0.3)Mg x Ti1–x O3–x (x = 0 ∼ 0.3) thin films were successfully prepared on ITO/glass substrate by sol-gel technique. The crystalline phase structures were measured through X-ray diffraction (XRD). The dielectric properties were measured by a precision impedance analyzer. Results show that the perovskite phase was stable in (Pb0.7Sr0.3)Mg x Ti1–x O3–x thin film. Its lattice constant was found to decrease with the increase of x when x < 0.1 and increase when x > 0.1.The crystalline phase formation and the dielectric properties of the (Pb0.7Sr0.3)Mg x Ti1–x O3–x thin film depend on Mg doping content. The phase formation ability was decreased below x = 0.1 and then increased above x = 0.1 with the increase in x. The dielectric constant of the thin film is correspondingly changed. The tunabilities of about 35% ∼ 63% were obtained at 10 kHz. The highest tunability and the lowest dielectric loss of the thin films appeared at x = 0.2. The FOM of the thin film with Mg doping of x = 0.2 is about three times higher than that of x = 0.1 under applied frequency of 10 kHz.
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