Study on the Dielectric Properties of Pb0.3Sr0.7(Ti1-xMgx)O3-x Thin Films Prepared by RF-Magnetron Sputtering

Chen Jingfeng,Du Piyi,Qin Ying,Weng Wenjian,Han Gaorong
2008-01-01
Rare Metal Materials and Engineering
Abstract:Magnesium doped (Pb,Sr)TiO3 thin films on ITO conductive film glass substrate were prepared by the rf (radio frequency) magnetron sputtering method. X-ray diffraction, scanning electron microscopy and Impedance Analyzer were applied to analyze the crystalline phase structure, surface morphology and dielectric properties. All films showed a perovskite structure without preferred orientation. The films had dense structure. Mg addition improved the capacitance-frequency property and made it more stable. The capacitance at low frequency decreased with Mg content increasing and reached the lowest when Mg was x=0.05, but then increased while Mg content continued increasing. The dielectric loss had the same trend. The dielectric tunability decreased with Mg addition, but the figure of merit (FOM) kept stable and a little increase when the doping content of Mg was x=0.05. The results showed that Mg doping could decrease dielectric loss effectively while keep the FOM stable.
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