Doping Effects of Ta on Conductivity and Microwave Dielectric Loss of MgTiO<sub>3</sub> Ceramics
Xiao-Jun Kuang,Hai-Ting Xia,Fu-Hui Liao,Chun-Hai Wang,Lei Li,Xi-Ping Jing,Zong-Xi Tang
DOI: https://doi.org/10.1111/j.1551-2916.2007.01899.x
IF: 4.186
2007-01-01
Journal of the American Ceramic Society
Abstract:Two kinds of solid solution systems of Ta-doped MgTiO3 were identified by X-ray diffraction, which can be represented by the formulae MgTi1-x(Mg1/3Ta2/3)(x)O-3 (0 <= x < 0.5) and MgTi1-xTaxO3 (0 <= x < 0.05). The conductivity and microwave dielectric loss for the two solid solution systems were examined by AC impedance and microwave resonator measurements, respectively. In the system MgTi1-x(Mg1/3Ta2/3)(x)O-3, the mechanism for the solid solution formation is the isovalent substitution of (Mg1/32+Ta2/35+)for Ti4+. In the system MgTi1-xTaxO3, the doping mechanism is the aliovalent substitution of Ta5+ for Ti4+, where for a small amount Ta doping, the oxygen vacancies formed during the high-temperature preparation are filled by an extra oxygen introduced from Ta2O5 and further Ta doping leads to an increase in the contents of Ta-Ti and electrons, which was consistent with conductivity measurements. In both systems, the Q x f values improved, e.g., similar to 17% for the isovalent substitution at x=0.08 and similar to 10% for the aliovalent substitution at x=0.02. The filling oxygen vacancy and the substitution of Ta/Mg for Ti may contribute to the improvement of Q x f values for both systems.